DataSheet26.com

BD10H200CS PDF даташит

Спецификация BD10H200CS изготовлена ​​​​«Pan Jit International» и имеет функцию, называемую «ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS».

Детали детали

Номер произв BD10H200CS
Описание ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
Производители Pan Jit International
логотип Pan Jit International логотип 

7 Pages
scroll

No Preview Available !

BD10H200CS Даташит, Описание, Даташиты
PBD10H200CS \ MBR10H200CT \ MBR10H200FCT \ MBR10H200DC SERIES
ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
Voltage 200~250 V Current
10 A
Features
TO-252
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
Low power loss, high efficiency.
High current capability
High junction temperature capability
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std. .(Halogen Free) (TO-252)
Mechanical Data
Case: TO-252, TO-220AB, ITO-220AB, TO-263 package
Terminals: solder plated, solderable per MIL-STD-750,Method 2026
TO-252 Weight: 0.0104 ounces, 0.297 grams
TO-220AB Weight: 0.067 ounces, 1.89 grams.
ITO-220AB Weight: 0.056 ounces, 1.6 grams.
TO-263 Weight: 0.051 ounces, 1.46 grams.
Marking: Part number
200V
250V
TO-252
BD10H200CS
BD10H250CS
TO-220AB MBR10H200CT MBR10H250CT
TO-263 MBR10H200DC MBR10H250DC
ITO-220AB MBR10H200FCT MBR10H250FCT
TO-220AB
ITO-220AB
TO-263
Maximum
Ratings
And
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified per device
current
per diode
Peak forward surge current : 8.3ms single half sine-
wave superimposed on rated load per diode
Maximum forward voltage at 5A per diode
Maximum dc reverse current
TJ =25 oC
at rated dc blocking voltage
TJ =125 oC
TO-252 (Note 1)
Typical thermal resistance
TO-220AB(Note 1)
TO-263(Note 1)
ITO-220AB(Note 1)
Operating junction temperature range
Storage temperature range
Note : 1. Semi-infinite heatsink
SYMBOL
VRRM
VRMS
VR
IF(AV)
IFSM
VF
IR
RJC
TJ
TSTG
200V
250V
200 250
140 175
200 250
10
5
150
0.9
0.5
1
6
3
3
7
-55 to +175
-55 to +175
UNIT
V
V
V
A
A
V
A
mA
oC/W
oC
oC
November 19,2014-REV.01
Page 1









No Preview Available !

BD10H200CS Даташит, Описание, Даташиты
PBD10H200CS \ MBR10H200CT \ MBR10H200FCT \ MBR10H200DC SERIES
6
5
4
3
2
1 per diode
0
0 25 50
75 100 125 150 175
TC, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
1000
100
TJ = 175°C
10
TJ = 150°C
1
TJ = 125°C
0.1
0.01
TJ = 75°C
per diode
TJ = 25°C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
1000
100
10
per diode
1
1
10
100
VR, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
10
per diode
1 TJ = 175°C
TJ = 125°C
0.1 TJ = 150°C
TJ = 75°C
TJ = 25°C
0.01
0
0.2 0.4 0.6 0.8
VF, Forward Voltage (V)
1
Fig.4 Typical Forward Characteristics
November 19,2014-REV.01
Page 2









No Preview Available !

BD10H200CS Даташит, Описание, Даташиты
PBD10H200CS \ MBR10H200CT \ MBR10H200FCT \ MBR10H200DC SERIES
MOUNTING PAD LAYOUT
ORDER INFORMATION
˙Packing information
T/R - 3K per 13" plastic Reel
November 19,2014-REV.01
Page 3










Скачать PDF:

[ BD10H200CS.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BD10H200CSULTRA LOW IR SCHOTTKY BARRIER RECTIFIERSPan Jit International
Pan Jit International

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск