DataSheet26.com

2N1876 PDF даташит

Спецификация 2N1876 изготовлена ​​​​«Digitron Semiconductors» и имеет функцию, называемую «SILICON CONTROLLED RECTIFIERS».

Детали детали

Номер произв 2N1876
Описание SILICON CONTROLLED RECTIFIERS
Производители Digitron Semiconductors
логотип Digitron Semiconductors логотип 

2 Pages
scroll

No Preview Available !

2N1876 Даташит, Описание, Даташиты
2N1875-2N1880
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Repetitive peak off-state voltage
Repetitive peak reverse voltage
DC on-state current
100°C ambient
100°C case
Repetitive peak on-state current
Peak one cycle surge (non-repetitive) on-
state current
Peak gate current
Average gate current
Reverse gate voltage
Thermal resistance, junction to case
Operating and storage temperature range
Symbol
VDRM
VRRM
IT
ITRM
ITSM
IGM
IG(AV)
VGR
RӨJC
TJ, Tstg
2N1875
15
15
2N1876
30
30
2N1877
60
60
2N1878
100
100
250
1.25
Up to 30
15
250
25
5
20
-65 to 150
2N1879
150
150
2N1880
200
200
Unit
V
V
mA
A
A
A
mA
mA
V
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristics
Symbol
Min
Typ Max Unit
Test Condition
Subgroup 2 (25°C test)
Off-state current
IDRM - 0.5 5 µA VDRM = rating, RGK = 1KΩ
Reverse current
IRRM - 0.5 10 µA
VRRM = rating
Reverse gate current
Gate trigger current
Gate trigger voltage
IGR - 0.5 10 µA
IGT - 5 20 µA
VGT 0.44 0.52 0.60 V
VGR = 2V
VD = 5V, RGS = 10KΩ
VD = 5V, RGS = 100Ω
Anode trigger current (1)
IAT - 100 - µA
VD = 5V
On-state voltage
VT 0.8 1.8 2.5 V
IT = 2A(pulse test)
Holding current
IH
0.3 1.0
3 mA
IG = -150µA, VAA = 5V
Subgroup 3 (25°C test)
Turn-on time
Turn-off time
Gate trigger – on pulse width
ton
toff
tpg(on)
- 0.1 - µs
- 0.5 - µs
- 0.5 - µs
IG = 20mA, IT = 0.5A,
VD = 30V
Circuit commutated turn-off time
Subgroup 4 (125°C test)
tq
- 10 - µs
IT = 0.5A, IR = 0.5A,
RGK = 1KΩ
High temperature off-state current
IDRM - 5 20 µA VD = rating, RGK = 1KΩ
High temperature reverse current
IRRM - 15 100 µA
VRRM = rating
Note 1: For a maximum limit of 50µA, use suffix “-1” and drop 2N.
Voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used.
Rev. 20130116









No Preview Available !

2N1876 Даташит, Описание, Даташиты
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case:
TO-5
Marking:
Body painted, alpha-numeric
Pin out:
See below
2N1875-2N1880
SILICON CONTROLLED RECTFIERS
TO-5
Dim Inches
Millimeters
Min Max Min Max
HD 0.335 0.370 8.510 9.400
CD 0.305 0.335 7.750 8.510
CH 0.240 0.260 6.100 6.600
LL 1.500 - 38.100
-
LD 0.016 0.021 0.410 0.530
LU 0.016 0.019 0.410 0.480
P 0.100 -
2.540
-
TL 0.029 0.045 0.740 1.140
TW 0.028 0.034 0.710 0.860
TH 0.009 0.125 0.230 3.180
LO 0.141 NOM
3.590 NOM
α 45°TP
45°TP
Rev. 20130116










Скачать PDF:

[ 2N1876.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
2N187Alloy Junction Germanium TransistorsSemitronics
Semitronics
2N1870SCRs 1.25 Amp / PlanearMicrosemi
Microsemi
2N1870SCRs 1.25 Amp / PlanearMicrosemi
Microsemi
2N1870ASILICON CONTROLLED RECTFIERSDigitron Semiconductors
Digitron Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск