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PDF 2N3019 Data sheet ( Hoja de datos )
| Número de pieza | 2N3019 | |
| Descripción | Low Power Transistor | |
| Fabricantes | ON Semiconductor | |
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Hay una vista previa y un enlace de descarga de 2N3019 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2N3019
Low Power Transistor
NPN Silicon
Features
• MIL−PRF−19500/391 Qualified
• Available as JAN, JANTX, and JANTXV
• Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector −Emitter Voltage
VCEO
80
Collector −Base Voltage
VCBO
140
Emitter −Base Voltage
VEBO
7.0
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
IC 1.0
PT 800
Total Device Dissipation @ TC = 25°C
PT 5.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to
+200
Unit
Vdc
Vdc
Vdc
Adc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
195 °C/W
Thermal Resistance, Junction to Case
RqJC
30 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−5
CASE 205AA
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N3019
JANTX2N3019
TO−5
Bulk
JANTXV2N3019
© Semiconductor Components Industries, LLC, 2011
July, 2011 − Rev. 0
1
Publication Order Number:
2N3019/D
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3019.PDF ] | |
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