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2N2946A PDF даташит

Спецификация 2N2946A изготовлена ​​​​«Microsemi» и имеет функцию, называемую «PNP SILICON SMALL SIGNAL TRANSISTOR».

Детали детали

Номер произв 2N2946A
Описание PNP SILICON SMALL SIGNAL TRANSISTOR
Производители Microsemi
логотип Microsemi логотип 

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2N2946A Даташит, Описание, Даташиты
2N2944A – 2N2946A
Available on
commercial
versions
PNP Silicon Small Signal Transistor
Qualified per MIL-PRF-19500/382
DESCRIPTION
This 2N2944A through 2N2946A PNP silicon transistor device is military qualified up to a
JANTXV level for high-reliability applications. Microsemi also offers numerous other products
to meet higher and lower power voltage regulation applications.
Qualified Levels:
JAN, JANTX, and
JANTXV
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N2944A thru 2N2946A series.
JAN, JANTX, and JANTXV qualifications per MIL-PRF-19500/382 available.
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
Low profile metal can package.
ESD to Class 3 per MIL-STD-750, method 1020.
TO-46 (TO-206AB)
Package
Also available in:
UB package
(surface mount)
2N2944AUB – 2N2946AUB
MAXIMUM RATINGS @ +25 oC unless specified otherwise.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Ambient
Collector Current (dc)
Emitter to Base voltage (static),
2N2944A
collector open
2N2945A
2N2946A
Collector to Base voltage (static),
2N2944A
emitter open
2N2945A
2N2946A
Collector to Emitter voltage (static),
2N2944A
base open
2N2945A
2N2946A
Emitter to Collector voltage
2N2944A
2N2945A
2N2946A
Total Power Dissipation, all terminals @ TA = +25 oC (1)
Notes: 1. Derate linearly 2.30 mW /oC above TA = +25 oC.
Symbol
TJ and TSTG
R ӨJA
IC
V EBO
V CBO
V CEO
V ECO
PT
Value
-65 to +200
435
-100
-15
-25
-40
-15
-25
-40
-10
-20
-35
-10
-20
-35
400
Unit
oC
oC/W
mA
V
V
V
V
mW
T4-LDS-0236, Rev. 1 (11960)
©2011 Microsemi Corporation
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Page 1 of 5









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2N2946A Даташит, Описание, Даташиты
2N2944A – 2N2946A
MECHANICAL and PACKAGING
CASE: Nickel plated kovar, glass seals.
TERMINALS: Gold plating over nickel, solder dipped, kovar.
MARKING: Part number, date code, manufacturer’s ID.
WEIGHT: 0.234 grams.
See Package Dimensions on last page.
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
PART NOMENCLATURE
JAN 2N2944A (e3)
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Symbol
IB
IE
V CB
V EB
V (BR)
SYMBOLS & DEFINITIONS
Definition
Base current (dc).
Emitter current (dc).
Collector to base voltage (dc).
Emitter to base voltage (dc).
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
T4-LDS-0236, Rev. 1 (11960)
©2011 Microsemi Corporation
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2N2946A Даташит, Описание, Даташиты
2N2944A – 2N2946A
ELECTRICAL CHARACTERISTICS @ 25 oC unless otherwise noted.
Characteristic
OFF CHARACTERISTICS:
Collector-Emitter Breakdown Voltage
IC = -10 µA
2N2944A
2N2945A
2N2946A
Emitter-Collector Breakdown Voltage
IE = -10 µA, IB = 0
2N2944A
2N2945A
2N2946A
Collector-Base Cutoff Current
VCB = -15 V
VCB = -25 V
VCB = -40 V
2N2944A
2N2945A
2N2946A
Emitter-Base Cutoff Current
VEB = -12 V
VEB = -20 V
VEB = -32 V
ON CHARACTERISTICS: (1)
2N2944A
2N2945A
2N2946A
Forward-Current Transfer Ratio
IC = -1.0 mA, VCE = -0.5 V
2N2944A
2N2945A
2N2946A
Forward-Current Transfer Ratio (inverted connection)
IE = -200 µA, VEC = -0.5 V
2N2944A
2N2945A
2N2946A
Emitter-Collector Offset Voltage
IB = -200 µA, IE = 0
2N2944A
2N2945A
2N2946A
IB = -1.0 mA, IE = 0
2N2944A
2N2945A
2N2946A
IB = -2.0 mA, IE = 0
2N2944A
2N2945A
2N2946A
DYNAMIC CHARACTERISTICS:
Emitter-Collector On-State Resistance
IB = -100 µA, IE = 0, Ie = 100 µA ac (rms)
f = 1.0 kHz
IB = -1.0 mA, IE = 0, Ie = 100 µA ac (rms)
f =1.0 kHz
2N2944A
2N2945A
2N2946A
2N2944A
2N2945A
2N2946A
Magnitude of Small-Signal Forward
Current Transfer Ratio
IC = -1.0 mA, VCE = -6.0V, f = 1.0 MHz
2N2944A
2N2945A
2N2946A
Output Capacitance
VCB = -6.0 V, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = -6.0 V, IC = 0, 100 kHz f 1.0 MHz
Symbol
Min. Max.
V(BR)CEO
V(BR)ECO
ICBO
IEBO
-10
-20
-35
-10
-20
-35
10
10
10
-0.1
-0.2
-0.5
hFE
hFE(inv)
VEC(ofs)
100
70
50
50
30
20
-0.3
-0.5
-0.8
-0.6
-1.0
-2.0
-1.0
-1.6
-2.5
rec(on)
|hfe|
Cobo
Cibo
10
12
14
4.0
6.0
8.0
15 55
10 55
5.0 55
10
6.0
(1) Pulse Test: Pulse Width = 300 s, duty cycle 2.0%.
Unit
V
V
µA
ηA
mV
pF
pF
T4-LDS-0236, Rev. 1 (11960)
©2011 Microsemi Corporation
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