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MQ3762 PDF даташит

Спецификация MQ3762 изготовлена ​​​​«Motorola Semiconductors» и имеет функцию, называемую «DUAL AMPLIFIER TRANSISTOR».

Детали детали

Номер произв MQ3762
Описание DUAL AMPLIFIER TRANSISTOR
Производители Motorola Semiconductors
логотип Motorola Semiconductors логотип 

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MQ3762 Даташит, Описание, Даташиты
MD3762,F
MQ3762
MD3762
CASE 654-07, STYLE 1
MD3762F
CASE 61 0A-04, STYLE 1
MQ3762
CASE 607-04, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation
@ Ta = 25°C
MD3762
MD3762F
MQ3762
Derate above 25°C
MD3762
MD3762F
MQ3762
Total Device Dissipation
@ TC = 25X
MD3762
MD3762F
MQ3762
Derate above 25°C
MD3762
MD3762F
MQ3762
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
v EBO
ic
PD
Value
40
40
5.0
1.5
One Die
All Die
Equal Power
Unit
Vdc
Vdc
Vdc
Adc
mW
600
350
400
3.42
2.0
2.28
Pd
650
400
600
3.7
2.28
3.42
mW/°C
Watts
Tj- Tstg
2.1
1.25
1.0
3.0
2.5
4.0
12
7.15
5.71
17.2
14.3
22.8
-65 to +200
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MD3762
MD3762F
MQ3762
MD3762
MD3762F
MQ3762
Symbol
R&jc
RaJAd)
Coupling Factors
MD3762
MD3762F
MQ3762 (0.1-0.2)
(Q1-Q3, Q1-Q4)
(1) RgjA is measured with the device soldered into a typical printed circuit board.
One Die
All Die
Equal Power
83.3
140
175
58.3
70
43.8
292
500
438
Junction to
Ambient
270
438
292
Junction to
Case
85 40
75
57
55
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
0C = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 10 ^Adc, = 0)
Emitter-Base Breakdown Voltage
E(l = 10 nAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 30 Vdc, Ie = 0)
(Vcb = 30 Vdc, Ie = 0, TA = 100°C)
Emitter Cutoff Current
(V BE = 3.0 Vdc, Cl = 0)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
lEBO
Typ
100 nAdc
10 /iAdc
100
5-68









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MQ3762 Даташит, Описание, Даташиты
MD3762.F, MQ3762
ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.:
ON CHARACTERISTICS^}
Characteristic
DC Current Gain
dC = I.OAdc, VCE = 2.0 Vdc)
Symbol
>
"FE
Collector-Emitter Saturation Voltage
dC = LOAdc, Ib = 0.1 Adc)
VcE(sat)
Base-Emitter Saturation Voltage
dC = 1.0 Adc, Ib = 0.1 Adc)
VBE(sat)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dp = 50 mAdc, Vqe = 10 Vdc, f = 100 MHz)
Output Capacitance
(VcB = 10 Vdc, = 0, f = 140 kHz)
Cobo
Input Capacitance
(VBE = 0-5 Vdc, cl = 0, f = 140 kHz)
SWITCHING CHARACTERISTICS
Cjbo
Delay Time
Rise Time
(VCc = V30 Vdc, BE ( 0ff) = 2.0 Vdc,
IC = 1.0 Adc, Ibi = 100 mAdc)
Storage Time '
Fall Time
(Vcc = 30 Vdc, lc = I.OAdc,
'B1 = 'B2 = 100 mAdc)
(2) Pulse Test: Pulse Width « 300 fis, Duty Cycle « 2.0%.
(3) f-r is defined as the frequency at which |hfe| extrapolates to unity.
»d
tr
ts
tf
Min
20
-
Typ
40
0.52
1.05
8.5
5.0
18
45
18
Max
1.0
1.4
Unit
-
Vdc
Vdc
20 pF
80 pF
10 ns
30 ns
80 ns
30 ns
FIGURE 1 - DC CURRENT GAIN
FIGURE 2 - COLLECTOR SATURATION REGION
VCF- 2.0 t
i
ztOO
<
CD «•«*''
s 10
ec
u SO
Tj -175°4,
loqoj;
259CJ
-55°C
30
*
ic = 20 mA 100 mA
1 Tj = 25°C
10 mA
L
>
y.oA
-
5.0 10
20
SO 100 200
IC, COLLECTOR CURRENT (mA)
500 1000
FIGURE 3 - 'X>N" VOLTAGE
1.4
-Tj •?"i f
1.2
§1.0
o>
^0.8
cs
<
>
f 0.4
0.2
Vb um\ iMr/ 11*10
(«><
10
10
20 30
50 70 100
200 300
IC. COLLECTOR CURRENT (mA)
1.0 2.0
5.0 10
20
IB. BASE CURRENT (mA)
50 100 200
FIGURE 4 - TEMPERATURE COEFFICIENTS
"Applies for Iq/'B < hFE/*
*9VC for VcE(at)
ioO°Cto'l7'5°c/
25°Cto100°C J^
;
i°C_
evo'cf vbe
-6 5°C to 2 5°C
^mp :t( 1 5°C
*J 5°Cto100°C
10
20 30
50 70 100
200 300 500 700 1000
IC, COLLECTOR CURRENT (mA)
5-69









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MQ3762 Даташит, Описание, Даташиты
MD3762,F, MQ3762
FIGURE S - ACTIVE REGION SAFE OPERATING AREA
< 0.6
5 0.4
DC
DC
« 0.2
ODC
5 o.i
So.06
-0.04
rj - 200°C -
1
Bonding Win Limit
Stcond Brakdown Limit
^ ic
0.02
4.0 6.0 8.0 10
20
Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS)
FIGURE 6 - TURN-ON TIME
,
IC/lB* |0 |
T 25°C
100
FIGURE 7 - RISE AND FALL TIME
200
-T -150°C
100
70
1W
x
I-
30
20
10
Ur*»Vcc=3 IV"
S. 1 r? 'CC = 0V
2 QvN.
td^VBEIoff
11
1
20 30
50 70 100
200 300
IC. COLLECTOR CURRENT (mA)
9»
500 700 1.0 k
70
-= 50
s
i- 30
20
^* fc»
s^
1
i?
*
tt
4
y\.
11
20
30
50 70 100
200 300
COLLECTOR CURRENT (mA)
500 700 1.0 k
FIGURE 8 - STORAGE TIME
^»-
--
a, 100
<
cc
)l C/lB = 20
IB1 - lB2
40
t' s =tj-1/8t f
_
-Tj = 150°C
--».
ic/i
*"""
[^
ftf...,^= ^-
*S=;::
=*.
V-> ^-i-
N \c _ s
\
FIGURE 9- FALL TIME
\.
100
~ 70
1- 50
~ 30
*\ \
N.
\^
-Tj
..
.. -T. = 1 50° C
s
s
S *>
v.
' '^
^IC/'8= 20
V «*
A^
IC/lB" 10-
"* -^
1
vc c=iov
lB1 = lB2
10
20 30
50 70 100
200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700 1.0 k
FIGURE 10 - SWITCHING TIME TEST CIRCUIT
+27.3 V
-30 V
FIGURE 11 - CAPACITANCE
70
1
SO ... c!5s
1
OVl
I—
J
0.1 »iF
° t 7)*l * vna,
T-
\ 1N916 or r4
< ,»«iuiv. -¥•
^
zui 30
<z
5 20
"'
Vfob
RlnTlmt<5n»
mPulM Width - 400
Duty Cycla - 2%
\q" 1.0 Amp
b.1 * 'B2" '100 mA
0.04 0.06 0.1
0.2 0.4 0.6 1.0 2.0 4.0 6.0 10
Vr. REVERSE VOLTAGE (VOLTS)
20- 40
5-70










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