1N5712 PDF даташит
Спецификация 1N5712 изготовлена «LGE» и имеет функцию, называемую «Small Signal Schottky Diodes». |
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Детали детали
Номер произв | 1N5712 |
Описание | Small Signal Schottky Diodes |
Производители | LGE |
логотип |
3 Pages
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Features
Metal-to-silicon junction
High breakdown voltage
Low turn-on voltage
Ultrafast switching speed
Prmarly intended for high level UHF/VHF detection
and pulse applications with broad dynamic range
Mechanical Data
Case:JEDEC DO--35,glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak reverse voltage
Pow er dissipation (Infinite Heat Sink)
Forw ard continuous current
Junction and storage temperature range
Maximumlead temperature for soldering during 10S at 4mmfromcase
1N5712
Small Signal Schottky Diodes
VOLTAGE RANGE: 20 V
POWER DISSIPATION: 430 mW
DO - 35(GLASS)
Dimensions in millimeters
Symbols
VRRM
Ptot
IFSM
TJ/TSTG
TL
Value
20.0
430.0
35.0
c-55 ---+ 150
230
UNITS
V
mW
mA
ELECTRICAL CHARACTERISTICS
Reverse breakdow n voltage @ IR=10 A
Leakage current
@ VR=16V
Forw ard voltage drop @ IF=1mA
Test pulse: tp 300 s <2% IF=35mA
Junction capacitance @ VR=0V,f=1MHz
Thermal resistance
Symbols
Min.
Typ.
Max. UNITS
VR
IR
VF
CJ
RθJA
20.0
V
150 nA
0.41
V
1.0
2 pF
400 K/W
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1N5712
Small Signal Schottky Diodes
Ratings AND Charactieristic Curves
FIG.1 -- TYPICAL CURRENT VERSUS FORWARD VOLTAGE AT DIFFERENT TEMPERATURES (TYPICAL VALUES)
mA
10 2
10
IF
1
10 -1
Tamb=150
Tamb=20
Tamb=55
10
-2
0
0.2 0.4 0.6 0.8 1 1.2 V
VF
FIG.2 --FORWARD CURRENT VERSUS FORWARD VOLTAGE (TYPICAL VALUES)
mA
30
25
IF
20
Tamb=25
15
10
5
0
0 0.2 0.4 0.6 0.8 1 V
VF
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mail:[email protected]
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1N5712
Small Signal Schottky Diodes
Ratings AND Charactieristic Curves
--------
FIG.3 --REVERSE CURRENT VERSUS AMBIENT
TEMPERATURE
BB
FIG.4 -- REVERSE CURRENT VERSUS CONTINUOUS ZZ ZZ
X REVERSE VOLTAGE (TYPICAL VALUES) B
A
2
10
10
IR
1
90%confidence
VR=16V
max
typ
10-1
10-2
A
102
10
IF
1
-1
10
-2
10
150
125
100
75
50
25
10-30
25 50 75 100 125 150
Tamb
-3
10 0
25 50
75 100 125 150 V
VR
FIG.5 -- CAPACITANCE CVERSUS REVERS APPLIED VOLTAGE VR (TYPICAL VALUES)
pF
3.0
2.5
CJ 2.0
1.5
1.0
0.5
0
0
Tamb=25
5 10 15 20 V
VR
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mail:[email protected]
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Номер в каталоге | Описание | Производители |
1N5711 | SMALL SIGNAL SCHOTTKY DIODE | STMicroelectronics |
1N5711 | SCHOTTKY BARRIER DIODES | Compensated Deuices Incorporated |
1N5711 | SCHOTTKY BARRIER SWITCHING DIODE | Diodes Incorporated |
1N5711 | Schottky Diodes | General Semiconductor |
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DataSheet26.com | 2020 | Контакты | Поиск |