P2N2907 PDF даташит
Спецификация P2N2907 изготовлена «Motorola Semiconductors» и имеет функцию, называемую «AMPLIFIER TRANSISTORS». |
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Детали детали
Номер произв | P2N2907 |
Описание | AMPLIFIER TRANSISTORS |
Производители | Motorola Semiconductors |
логотип |
2 Pages
No Preview Available ! |
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation T/\ = 25°C
Derate above 25°C
Total Device Dissipation Tq = 25°C
Derate above 25 °C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T stg
Symbol
R»jc
RftJA
P2N P2N
2907 2907A
40 60
60
5.0
600
625
5.0
1.5
12
-55 to +150
Max
83.3
200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
dC = 10 mAdc, IB = 0)
P2N2907
P2N2907A
Collector-Base Breakdown Voltage
(IC = 10 tiAdc, l£ = 0)
Emitter-Base Breakdown Voltage
Oe = 10 uAdc, Ic = 0)
Collector Cutoff Current
tVc'E = 30 Vdc, VEB(off) = 9-5 Vdc)
Collector Cutoff Current
(V C B = 50 Vdc, l£ = 0)
(VcB = 50 Vdc, IE = 0, Ta = 125°C)
.
P2N2907
P2N2907A
P2N2907
P2N2907A
Base Current
(V C E = 30 Vdc, VEB(off) = 0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, Vce = 10 Vdc)
C(l = LOmAdc, V C E = 10 Vdc)
dC = 10 mAdc, Vce = 10 Vdc)
dC = 150 mAdc, VcE = 10 Vdc) (1)
dC = 500 mAdc, VcE = 1 Vdc) (1)
P2N2907
P2N2907A
P2N2907
P2N2907A
P2N2907
P2N2907A
P2N2907, P2N2907A
P2N2907
P2N2907A
Collector-Emitter Saturation Voltage (1)
(lC = 1 50 mAdc, Ib = 1 5 mAdc)
(lC = 500 mAdc, Ib = 50 mAdc)
Base-Emitter Saturation Voltage (1)
(lC = 1 50 mAdc, Ifi = 1 5 mAdc)
(lC = 500 mAdc, Ib = 50 mAdc)
P2N2907
P2N2907A
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
AMPLIFIER TRANSISTORS
PNP SILICON
Refer to MPS2907 for graphs.
Symbol
V(BR)CE0
V(BR)CBO
V(BR)EBO
•CEX
ICBO
Min
40
60
60
5.0
—
—
IB
hFE
VCE(sat)
VBE(sat)
—
35
75
50
100
75
100
100
30
50
—
Max
—
—
50
0.020
0.010
20
10
50
300
0.4
1.6
1.3
2.6
Unit
Vdc
Vdc
Vdc
nAdc
^Adc
nAdc
Vdc
Vdc
2-289
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P2N2907, P2N2907A
ELECTRICAL CHARACTERISTICS (continued) (T A = 25 °C unless otherwise noted.
Characteristic
SMALL-SIGNAL CHARACTERISTICS
Symbol
|
Current-Gam - Bandwidth Product (1), (2)
(lc = 50 mAdc, Vce = 20 Vdc, f = 1 00 MHz)
fT
Output Capacitance
(Vcb = 1 Vdc, IE = 0, f = 1 .0 MHz)
Cobo
Input Capacitance
(Vbe = 2.0 Vdc, lc = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cjbo
Turn-On Time
Delay Time
Rise Rime
Turn-Off Time
Storage Time
Fall Time
(VCC = 30 Vdc, lc = 150 mAdc,
IB 1 =15 mAdc) (Figures 1 and 5)
(Vcc = 6.0 Vdc, lc = 1 50 mAdc,
•b1 = 'B2 - 1 5 mAdc) (Figure 2)
ton
td
tr
toff
ts
tf
|
Min
200
—
—
—
—
—
—
—
Max
|
8.0
30
50
10
40
110
80
30
|
MHz
PF
pF
ns
ns
ns
ns
ns
ns
FIGURE 1 - DELAY AND RISE
TIME TEST CIRCUIT
INPUT
z = so n
PRF = 150 PPS
RISE TIME <£ 2.0 ns
P.W. < 200 ns
9 -30 V
200
— 1.0 k
— O • VW
TO OSCILLOSCOPE
RISE TIME < 6.0 ns
FIGURE 2 - STORAGE AND FALL
TIME TEST CIRCUIT
INPUT
z = 5on
+i5 v -mv
PRF - 150 PPS
RISE TIME «: 2.0 ns
P.W. < 200 ns
TO OSCILLOSCOPE
RISE TIME < 5.0 ns
2-290
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Номер в каталоге | Описание | Производители |
P2N2907 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS | CDIL |
P2N2907 | AMPLIFIER TRANSISTORS | Motorola Semiconductors |
P2N2907A | PNP SILICON PLANAR EPITAXIAL TRANSISTORS | CDIL |
P2N2907A | Amplifier Transistor | ON Semiconductor |
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