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Datasheet 1N5807 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N5807 | RECTIFIERS | Solid State | rectifier |
2 | 1N5807 | VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS 1N5807, 1N5809 and 1N5811
Available on commercial
versions
VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/477
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where | Microsemi | rectifier |
3 | 1N5807 | SUPERFAST RECTIFIER DIOSE RECTIFIER, up to 150V, 6A, 30ns
1N5807 1N5809 1N5811
TEL:805-498-2111 FAX:805-498- 3804 WEB:http://www.semtech.com
MECHANICAL
G112
Dimensions
DIM N
Millimeters MIN MAX
Inches MIN MAX
Note
A 2.92 3.61 .115 0.142
B 22.9 33.0 0.90
1.30
C 3.3 7.62 .130
0.3
D - 0.80 -
.030
E 0.91 1.07 0. | Semtech | rectifier |
4 | 1N5807 | Rectifier Diode 1N5807(US), 1N5809(US), 1N5811(US)
Rectifier Diode Series Ultrafast Recovery
Features
Popular JEDEC Registered Series Voidless Hermetically Sealed Glass Package Available in Axial Leaded and MELF packages Extremely Robust Construction Internal “Category I” Metallurgical Bond | MA-COM | rectifier |
5 | 1N5807 | ULTRAFAST RECOVERY RECTIFIER DIODES www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
1N5807 - 1N5811
PRV : 50 - 150 Volts Io : 6.0 Amperes
ULTRAFAST RECOVERY RECTIFIER DIODES
D2A
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop | EIC | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re Unisonic Technologies mosfet | | |
4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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Número de pieza | Descripción | Fabricantes | |
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