BC108 PDF даташит
Спецификация BC108 изготовлена «Multicomp» и имеет функцию, называемую «Low Power Bipolar Transistors». |
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Детали детали
Номер произв | BC108 |
Описание | Low Power Bipolar Transistors |
Производители | Multicomp |
логотип |
5 Pages
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BC107/ BC108/ BC109
Low Power Bipolar Transistors
TO-18
Features:
NPN Silicon Planar Epitaxial Transistors.
Suitable for applications requiring low noise and good hFE linearity, eg. audio
pre-amplifiers, and instrumentation.
TO-18 Metal Can Package
Pin Configuration
1. Emitter.
2. Base.
3. Collector.
Dimension
A
B
C
D
E
F
G
H
J
K
L
Minimum
Maximum
5.24 5.84
4.52 4.97
4.31 5.33
0.40 0.53
- 0.76
- 1.27
- 2.97
0.91 1.17
0.71 1.21
12.70
-
45°
Dimensions : Millimetres
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30/05/05 V1.0
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BC107/ BC108/ BC109
Low Power Bipolar Transistors
Absolute Maximum Ratings
DESCRIPTION
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate Above 25°C
Power Dissipation at Tc = 25°C
Derate Above 25°C
Operating And Storage Junction
Temperature Range
Thermal Resistance
Junction to Case
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
BC107 BC108 BC109 UNIT
45 25 25 V
50 30 30 V
6.0 5.0 5.0 V
0.2 A
0.6 W
2.28 mW/°C
1.0 W
6.67 mW/°C
-65 to +200
°C
Rth (j-c)
175 °C/W
Electrical Characteristics (Ta = 25°C Unless Otherwise Specified)
Description
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Cut off Current
Symbol
VCEO
VEBO
ICBO
Test Condition
Minimum
IC = 2mA, IB = 0
IE = 10uA, IC = 0
BC107
BC108/109
BC107
BC108/109
45
20
6.0
5.0
VCB = 45V, IE = 0
VCB = 25V, IE = 0
Tamb = 125°C
VCB = 45V, IE = 0
VCB = 25V, IE = 0
BC107
BC108/109
BC107
BC108/109
Maximum
15
15
4.0
4.0
Unit
V
V
V
V
nA
nA
uA
uA
Page 2
30/05/05 V1.0
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BC107/ BC108/ BC109
Low Power Bipolar Transistors
Description
DC Current
Symbol
hFE
Base Emitter Saturation Voltage VBE (Sat)
Collector Emitter Saturation Voltage VCE (Sat)
Base Emitter on Voltage
VBE (on)
Collector Knee Voltage
VCE (K)
Transition Frequency
Noise Figure
ft
NF
Output Capacitance
Small Signal Current Gain
Cobo
hFE
Input Impedance
Output Admittance
hie
hoe
Test Condition
Minimum
IC = 10uA, VCE = 5V
B Group 40
C Group 100
IC = 2mA, VCE = 5V
BC107
BC108
BC109
A Group
B Group
C Group
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
IC = 2mA, VCE = 5V
IC = 10mA, VCE = 5V
IC = 10mA, IB = The Value for
which IC = 11mA, at VCE = 1V
110
110
200
110
200
420
0.55
VCE = 5V, IC =10mA, f = 100MHz
150
VCE = 5V, IC = 0.2mA
Rg = 2kohms,
F = 30Hz to 15 KHz
F = 1kHz, B = 200Hz
BC109
BC109
BC107/108
VCB = 10V, f = 1MHz
ALL f = 1kHz
IC = 2mA,VCE = 5V
BC107
BC108
BC109
125
125
240
A Group
B Group
C Group
125
240
450
ALL f = 1kHz
IC = 2mA,VCE = 5V
ALL f = 1kHz
IC = 2mA,VCE = 5V
A Group
B Group
C Group
A Group
B Group
C Group
1.6
3.2
6.0
Maximum
Unit
450
800
800
220
450
800
0.83 V
1.05 V
0.25 V
0.60 V
0.70 V
0.77 V
0.60 V
MHz
4.0
4.0
10
4.5
500
900
900
260
500
900
4.5
8.5
15
30
60
110
dB
dB
dB
pF
KΩ
KΩ
KΩ
umhos
umhos
umhos
Page 3
30/05/05 V1.0
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