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1N3214 PDF даташит

Спецификация 1N3214 изготовлена ​​​​«DACO SEMICONDUCTOR» и имеет функцию, называемую «STANDARD RECOVERY DIODE».

Детали детали

Номер произв 1N3214
Описание STANDARD RECOVERY DIODE
Производители DACO SEMICONDUCTOR
логотип DACO SEMICONDUCTOR логотип 

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1N3214 Даташит, Описание, Даташиты
DACO SEMICONDUCTOR CO., LTD.
1N3208(R)
THR U
1N3214A(R)
STANDARD RECOVERY DIODE STUD TYPES 15A
Features
High Surge Capability
Types Up to 600V VRRM
15 Amp Recti er
50-600 Volts
Maximum Ratings
Operating Temperature: -55 C to +175
Storage Temperature: -55 C to +175
Part Number
1N3208(R)
1N3209(R)
1N3210(R)
1N3211(R)
1N3212(R)
1N3213(R)
1N3214(R)
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
300V
400V
500V
600V
Maximum
RMS Voltage
35V
70V
140V
212V
280V
354V
420V
Maximum DC
Blocking
Voltage
50V
100V
200V
300V
400V
500V
600V
P
A
DO-5
J
K
D
G
FE
B
N
C
Notes :
1.Standard Polarity Stud is Cathod
2.Reverse Polarity: Stud is Anode
Electrical Characteristics @ 25
Average Forward
Current
(Per pkg)
IF(AV)
Peak F orward Sur ge
Cur rent
Maximum
IFSM
Instantaneous
Forward Voltage *
VF
Maximum
IRRneastvteeadrnsteDanCCeuoBrurloesncktinAgt
Voltage (Per leg)
IR
Maximum Thermal
Resistance Junction R j c
To Case
Unless Otherwise Specified
15 A
T C = 150
297A 8.3ms , half sine
1.1V
I FM = 15A
T J = 25
10μA T J = 25
12 mA TJ = 175
2.23 C/W
Mounting torque
Inch pounds
(in-pb)
30
DIM Inches
Min Max
Millimeters
Min Max
A 1/4 –28 UNF
B 0.669 0.687 17.19 17.44
C ----- 0.794 ----- 20.16
D ----- 1.020 ----- 25.91
E 0.422 0.453 10.72 11.50
F 0.115 0.200 2.93
5.08
G ----- 0.460 ----- 11.68
J ----- 0.280 -----
7.00
K 0.236
-----
6.00
-----
M ----- 0.589 ----- 14.96
N ----- 0.063 -----
1.60
P 0.140 0.175 3.56
4.45
Pulse Test: Pulse Width 300μsec. Duty Cycle < 2%
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1N3214 Даташит, Описание, Даташиты
DACO SEMICONDUCTOR CO., LTD. 1N3208(R) THRU 1N3214(R)
Figure.1-Typical Forward Characteristics
50
35
15
10
5
4
2
1.0
.4
.3
.2
.1
.0
0.5
25 C
0.7 0.9 1.1 1.3 1.5
Volts
Instantaneous Forward Voltage-Volts
1.7
Figure.3-Peak Forward Surge Current
600
8.3ms Single Half
500
Sine Wave
JEDEC method TJ =25
400
300
200
100
12
4 6 8 10 20 40 60 80 100
Cycles
Number Of Cycles At 60Hz- Cycles
Figur.2-Forward Derating Curve
18
15
12
9
6
3
Siinngglle PPhhaasse,eH, aHlfalWf aWveave
6600HHzzReRseisstiivsetivoer IonrdIuncdtuivcetiLvoeaLdoad
0 0 30 60 90 120
150
180
Case Temperature -
Figure.4- Typical Reverse Characteristics
50
T J=175
10
.1
.01
.001
0
T J=125
T J =75
T J =25
20 40 60 80
Volts
Reverse Voltage - Volts (%)
100
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