1N5552 Datasheet PDF - Microsemi
| Part Number | 1N5552 | |
| Description | STANDARD RECOVERY GLASS RECTIFIERS | |
| Manufacturers | Microsemi | |
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1N5550 thru 1N5554
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED STANDARD
RECOVERY GLASS RECTIFIERS
Qualified to MIL-PRF-19500/420
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. These industry-recognized 5.0 amp rated
rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed
with voidless-glass construction using an internal “Category 1” metallurgical bond. These
devices are also available in surface mount MELF package configurations. Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both through-
hole and surface mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5550 thru 1N5554 series.
• Voidless hermetically sealed glass package.
• Extremely robust construction.
• Quadruple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualified versions available per MIL-PRF-19500/420.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Standard recovery 5 amp 200 to 1000 volts rectifier series.
• Military and other high-reliability applications.
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Extremely robust construction.
• Inherently radiation hard as described in Microsemi “MicroNote 050”.
MAXIMUM RATINGS @ TA = 25 oC unless otherwise noted.
“B” Package
Also available in:
“B” SQ-MELF
(D-5B) Package
(surface mount)
1N5550US – 1N5554US
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead (1)
Thermal Impedance @ 10 ms heating time
Maximum Forward Surge Current (8.3 ms half sine)
Average Rectified Forward Current (1) @ TL = 30 oC
Average Rectified Forward Current (3) @ TA = 55 oC
@ TA = 100 oC
Working Peak Reverse Voltage
1N5550
1N5551
1N5552
1N5553
1N5554
Solder Temperature @ 10 s
See notes on next page.
Symbol
TJ and TSTG
R ӨJL
Z ӨJX
IFSM
I O(L)
I O2 (2)
I O3 (4)
V RWM
TSP
Value
-65 to +175
22
1.5
100
5
3
2
200
400
600
800
1000
260
Unit
oC
oC/W
oC/W
A
A
A
A
V
oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 1 of 6
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GRAPHS (continued)
1N5550 thru 1N5554
VF – Forward Voltage (V)
FIGURE 3
Typical Forward Voltage vs. Forward Current
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 1N5552 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 1N5552.PDF Datasheet ] | |
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