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PDF MMBTH10 Data sheet ( Hoja de datos )
| Número de pieza | MMBTH10 | |
| Descripción | VHF/UHF TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MMBTH10
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
VHF/UHF TRANSISTOR
NPN SILICON
Refer to MPSH10 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
v CEO
v CBO
v EBO
THERMAL CHARACTERISTICS
Characteristic
"Total Device Dissipation, T^ = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
TStQ
"Thermal Resistance Junction to Ambient
r sja
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
OC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 100 Mdc, l£ = 0)
Emitter-Base Breakdown Voltage
(lg = 10 /xAdc, lc = 0)
Collector Cutoff Current
(VC B = 25 Vdc, El = 0)
Emitter Cutoff Current
(V BE = 2.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 4.0 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
Oc = 4.0 mAdc, Ib = 0.4 mAdc)
Base-Emitter On Voltage
c(l = 4.0 mAdc, Vce = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 4.0 mAdc, VC e = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 10 Vdc, Ie = 0, f = 1.0 MHz)
Common-Base Feedback Capacitance
(Vcb = 1° Vdc, El = 0, f = 1.0 MHz)
Collector Base Time Constant
c(l = 4.0 mAdc, Vcb = 10 Vdc, f = 31.8 MHz)
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
!CBO
!EBO
Min
25
30
3.0
-
-
hFE
v CE(sat)
VBE
60
-
—
fT
c cb
Crb
rb'C c
650
-
0.35
—
Value
25
30
3.0
Max
350
2.8
150
357
Max
-
-
-
100
100
-
0.5
0.95
-
0.7
0.65
9.0
Unit
Vdc
Vdc
Vdc
Unit
mW
mVW°C
°C
°C/W
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
-
Vdc
Vdc
MHz
PF
PF
ps
3-112
1 page | ||
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| PDF Descargar | [ Datasheet MMBTH10.PDF ] | |
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