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MMBTA92 PDF даташит

Спецификация MMBTA92 изготовлена ​​​​«Diotec» и имеет функцию, называемую «Surface mount High Voltage Transistors».

Детали детали

Номер произв MMBTA92
Описание Surface mount High Voltage Transistors
Производители Diotec
логотип Diotec логотип 

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MMBTA92 Даташит, Описание, Даташиты
MMBTA92 / MMBTA93
MMBTA92 / MMBTA93
PNP
Surface mount High Voltage Transistors
Hochspannungs-Transistoren für die Oberflächenmontage
Version 2005-06-21
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Power dissipation
Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße [mm]
1=B 2=E 3=C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. - Kollektor-Emitter-Spannung
Collector-Base-voltage - Kollektor-Basis-Spannung
Emitter-Base-voltage - Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- VCEO
- VCBO
- VEBO
Ptot
- IC
Tj
TS
Grenzwerte (TA = 25°C)
MMBTA92
MMBTA93
300 V
200 V
300 V
200 V
5V
250 mW 1)
500 mA
-65...+150°C
-65…+150°C
Characteristics (Tj = 25°C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 200 V
IE = 0, - VCB = 160 V
MMBTA92
MMBTA93
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 3 V
Collector saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 20 mA, - IB = 2 mA
Base saturation voltage – Basis-Sättigungsspannung 2)
- IC = 20 mA, - IB = 2 mA
- ICB0
- ICB0
- IEB0
- VCEsat
- VBEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– – 250 nA
– – 250 nA
– – 100 nA
– – 500 mV
– – 900 mV
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1









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MMBTA92 Даташит, Описание, Даташиты
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 10 V, - IC = 1 mA
- VCE = 10 V, - IC = 10 mA
- VCE = 10 V, - IC = 30 mA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 10 V, - IC = 20 mA, f = 100 MHz
Collector-Base capacitance – Kollektor-Basis-Kapazität
- VCB = 20 V, IE =ie = 0, f = 1 MHz
MMBTA92
MMBTA93
Thermal resistance junction – ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
MMBTA92 / MMBTA93
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE 25
hFE 40
hFE 25
fT 50 MHz
CCB0
CCB0
– 6 pF
– 8 pF
RthA < 420 K/W 1)
MMBTA42, MMBTA43
MMBTA92 = 2D
MMBTA93 = 2E
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50 100 150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/
© Diotec Semiconductor AG










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