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PDF MMBTA92 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA92 | |
| Descripción | HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol MMBTA92 MMBTA93
VCEO
300
200
VCBO
300
200
VEBO
5.0
5.0
'C 500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation, Ta - 25°C
Derate above 25°C
PD
Storage Temperature
T stg
•Thermal Resistance Junction to Ambient
R fiUA
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Max
350
2.8
150
357
Unit
mW
mW/X
°C
°C/W
MMBTA92,93
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
HIGH VOLTAGE
TRANSISTOR
PNP SILICON
Refer to MPSA92 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged)
OC = 1.0 mAdc, Ib = 0)
MMBTA92
MMBTA93
Collector-Base Breakdown Voltage
(IC = 100 /uAdc, Ie = 0)
MMBTA92
MMBTA93
Emitter-Base Breakdown Voltage
(IE = 100 jiAdc, lc = 0)
Collector Cutoff Current
(Vcb = 200 Vdc, Ie = 0)
(Vcb = 160 Vdc, Ig = 0)
Emitter Cutoff Current
(Vbe = 3.0 Vdc, Ig = 0)
ON CHARACTERISTICS(I)
DC Current Gain
(IC = 1.0 mAdc, Vce = 10 Vdc)
(IC
=
10 mAdc, Vce
=
10 vdc
>
MMBTA92
MMBTA93
Both Types
Bo,h Tv P es
(IC = 30 mAdc, Vce = 10 Vdc)
MMBTA92
MMBTA93
Collector-Emitter Saturation Voltage •
(IC = 20 mAdc, Ib = 2.0 mAdc)
MMBTA92
MMBTA93
Base-Emitter Saturation Voltage
(IC = 20 mAdc, Ib = 2.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(IC = 10 mAdc, Vce = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 20 Vdc, l E = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse Width « 300 fis, Duty Cycle « 2.0%.
MMBTA92
MMBTA93
Symbol
v (BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
Min
300
200
300
200
5.0
IEBO
Max
.0.25
0.25
0.1
Vdc
Vdc
Vdc
/uAdc
piAdc
hFE
v CE(sat)
v BE(sat)
H
Ccb
25
-40 '
25
25
- 0.5
0.5
— 0.9
50 -r
6.0
8.0
Vdc
Vdc
MHz
PF
3-111
1 page | ||
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