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MMBTA92 PDF даташит

Спецификация MMBTA92 изготовлена ​​​​«Pan Jit International» и имеет функцию, называемую «PNP HIGH VOLTAGE TRANSISTOR».

Детали детали

Номер произв MMBTA92
Описание PNP HIGH VOLTAGE TRANSISTOR
Производители Pan Jit International
логотип Pan Jit International логотип 

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MMBTA92 Даташит, Описание, Даташиты
MMBTA92
PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE 300 Volts POWER 225 mWatts
FEATURES
• PNP silicon, planar design
• High voltage (max. 300V)
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Marking: A92
ABSOLUTE RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Peak base current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
CONDITIONS
open emitter
SYMBOL
VCBO
open base
VCEO
open collector
VEBO
IC
I CM
I BM
TAMB<25oC ; note1
PTOT
TSTG
TJ
TAMB
MIN.
-
-
-
-
-
-
-
-65
-
-65
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
REV.0.2-JUL.10.2009
MAX.
-300
-300
-5
-500
-600
-100
225
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
oC
oC
oC
PAGE . 1









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MMBTA92 Даташит, Описание, Даташиты
MMBTA92
THE RMA L C HA RA C TE RIS TIC S
PA RA ME TE R
C OND ITIONS
Thermal resistance from junction to ambient note 1
No te 1 : Tra ns i s to r mo unte d o n F R-4 b o a rd 7 0 x 6 0 x 1 mm.
C HA RA C TE RIS TIC S
TAMB=25oC unless otherwise specified
PA RA ME TE R
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capacitance
Tra ns i ti o n fre q ue nc y
Note 2: Pulse test : tp < 300µs;δ<0.02
C OND ITIONS
I E=0;VCB=-200V
I C=0;VEB=-3V
VCE=-10V;note 2
I C=-1mA
I C=-10mA
I C=-30mA
I C=-20mA;I B=-2mA
I C=-20mA;I B=-2mA
I E=ie=0;VCB=-20V;
f=1MHz
I C=-10mA;VCE=-20V;
f=100MHz
S YMB OL
RΘJA
S YMB OL
I CBO
I EBO
hFE
V CE(SAT)
V BE(SAT)
CC
fT
VALUE
500
M IN .
-
-
25
40
25
-
-
-
50
MAX.
-250
-100
-
-
-
-500
-900
6
-
UNIT
K/W
UNIT
nA
nA
-
mV
mV
pF
MHz
REV.0.2-JUL.10.2009
PAGE . 2









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MMBTA92 Даташит, Описание, Даташиты
MMBTA92
Total power dissipation Ptot = f(TS)
Transition frequency fT = f (IC)
VCE = 20V, f = 100MHz
400
mW
320
280
240
200
160
120
80
40
00 15 30 45 60 75 90 105 120 °C 150
TS
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10 3
MHz
fT
5
10 2
5
10 1
10 0
5 10 1
5 10 2 mA 5 10 3
ΙC
Operating range IC = f (VCEO)
TA = 25°C, D = 0
10 3
Ptot max
Ptot DC
5
10 2
5
10 1
5
D
=
tp
T
tp
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 3
mA
ΙC
10 2
5
10 1
5
10 0
5
10 µs
100 µs
1 ms
100 ms
DC 500 ms
10 0
10 -6
10 -5 10 -4 10 -3 10 -2
s
tp
REV.0.2-JUL.10.2009
10 0
10 -1
10 0
5 10 1
5 10 2 V 5 10 3
V CEO
PAGE.3










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