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MMBTA64 PDF даташит

Спецификация MMBTA64 изготовлена ​​​​«WEITRON» и имеет функцию, называемую «Darlington Transistor PNP Silicon».

Детали детали

Номер произв MMBTA64
Описание Darlington Transistor PNP Silicon
Производители WEITRON
логотип WEITRON логотип 

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MMBTA64 Даташит, Описание, Даташиты
Darlington Transistor
PNP Silicon
MMBTA64
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCES
VCBO
VEBO
IC
Value
-30
-30
-10
-500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board(1)
TA =25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Symbol
PD
R θJA
TJ,Tstg
Device Marking
MMBTA63=2U , MMBTA64=2V
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage(IC =-100 uAdc, IB=0)
Collector Cufoff Current(VCB=-30Vdc, IE=0)
Emitter Cufoff Current(VEB =-10Vdc, IC=0)
1. FR-5=1.0 I I0.75I I0.062 in
2. Pulse Test: Pulse Width<_ 300us, Duty Cycle <_ 2.0%
Value
225
1.8
556
-55 to +150
Unit
mW
mW/ C
C/W
C
Symbol
Min Max
Unit
V(BR)CEO
-30
-
Vdc
ICBO
IEBO
- -0.1 uAdc
- -0.1 uAdc
WEITRON
http://www.weitron.com.tw









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MMBTA64 Даташит, Описание, Даташиты
MMBTA64
ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max Unit
ON CHARACTERISTICS
(IC = -10 mAdc, VCE= -5.0 Vdc)
(IC = -100 mAdc, VCE= -5.0Vdc)
hFE
10000
20000
-
-
Collector-Emitter Saturation Voltage
(IC= -100 mAdc, IB= -0.1mAdc)
Base-Emitter On Voltage
(IC= -100 mAdc, VCE = -5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC= -10 mAdc, VCE=-5.0 Vdc, f=100 MHz)
VCE(sat)
VBE(on)
-
-
-1.5 Vdc
-2.0 Vdc
f T 125
- MHz
WEITRON
http://www.weitron.com.tw









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MMBTA64 Даташит, Описание, Даташиты
MMBTA64
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
-0.3
Ta =125 C
25 C
-55 C
-0.5 -0.7 -1.0
VCE =-2.0V
-5.0V
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
COLLECTOR CURRENT : IC (mA)
FIG.1 DC Current Gain
-50 -70 -100
-10V
-200 -300
-2.0
Ta =25 C
-1.6
VBE(sat) @IC/IB=100
-1.2
VBE(on) @VCE=-5.0V
-0.8 VCE(sat) @IC/IB=1000
IC/IB=100
-0.4
0
-0.3-0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 -100 -200-300
COLLECTOR CURRENT : IC (mA)
FIG.2 "On" Voltage
-2.0
Ta =25 C
-1.8
-1.6
IC =-10mA -50mA -100mA -175mA -300mA
-1.4
-1.2
-1.0
-0.8
-0.6
-0.1-0.2-0.5-1 -2 -5 -10-20 -50-100-200-500-1K-2K -5K-10K
BASE CURRENT : IB (uA)
FIG.3 Collector Saturatiion Region
10
VCE =-5.0V
4.0 f=100MHz
3.0 Ta =25 C
2.0
1.0
0.4
0.2
0.1
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1K
COLLECTOR CURRENT : IC (mA)
FIG.4 High Frequency Current Gain
WEITRON
http://www.weitron.com.tw










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