DataSheet26.com

1N758 PDF даташит

Спецификация 1N758 изготовлена ​​​​«Digitron Semiconductors» и имеет функцию, называемую «Silicon Zener Diode ( Rectifier )».

Детали детали

Номер произв 1N758
Описание Silicon Zener Diode ( Rectifier )
Производители Digitron Semiconductors
логотип Digitron Semiconductors логотип 

3 Pages
scroll

No Preview Available !

1N758 Даташит, Описание, Даташиты
1N746-1N759
High-reliability discrete products
and engineering services since 1977
SILICON PLANAR ZENER DIODES
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Operating and Storage Temperature
Thermal Resistance
Steady State Power
Forward Voltage @ 200mA
Solder Temperatures:
-65 to +175°C
250°C/W junction to lead at 3/8” lead length from body
0.5 Watts at TL ≤ 50°C
1.1 Volts
260°C for 10 s (max)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Normal Zener
Zener
Maximum Zener
Part
Number
(Note 1)
Voltage
VZ @ lZT
(Note 2)
Test
Current
lZT
Impedance
ZZT @ lZT
(Note 3)
Maximum Reverse
Leakage Current
VR = 1 Volt
Maximum
Zener Current
lZM
(Note 4)
Typical
Temperature
Coefficient
Of Zener
Voltage
VOLTS
mA
OHMS
μA @ 25°C μA @ 125°C
mA
%/°C
1N4370
2.4
20
30
100 200
150
-.085
1N4371
2.7
20
30
75 150
135
-.080
1N4372
3.0
20
29
50 100
120
-.075
1N746
3.3
20
28
10 30
110
-.066
1N747
3.6
20
24
10 30
100
-.058
1N748
3.9
20
23
10 30
95
-.046
1N749
4.3
20
22
2 30
85
-.033
1N750
4.7
20
19
2 30
75
-.015
1N751
5.1
20
17
1 20 70 ±.010
1N752
5.6
20
11
1 20 65 +.030
1N753
6.2
20
7
0.1 20 60 +.049
1N754
6.8
20
5
0.1 20 55 +.053
1N755
7.5
20
6
0.1 20 50 +.057
1N756
8.2
20
8
0.1 20 45 +.060
1N757
9.1
20
10
0.1 20
40
+.061
1N758
10
20
17 0.1 20
35
+.062
1N759
12
20
30 0.1 20
30
+.062
Notes:
1. Suffix letter A denotes ±5% tolerance, suffix C denotes ±2% tolerance, & suffix D denotes ±1% tolerance.
2. Voltage measurements to be performed 20 seconds after application of dc current.
3. Zener impedance derived by superimposing on lZT, a 60cps, rms ac current equal to 10% lZT (2mA ac)
4. Allowance has been made for the increase in VZ due to ZZ and for the increase in junction temperature as the unit approaches thermal
equilibrium at the power dissipation of 400mW.
Rev. 20120328









No Preview Available !

1N758 Даташит, Описание, Даташиты
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case:
DO-35 Glass
Marking:
Alpha Numeric
Polarity:
Cathode Band
1N746-1N759
SILICON PLANAR ZENER DIODES
Rev. 20120328









No Preview Available !

1N758 Даташит, Описание, Даташиты
High-reliability discrete products
and engineering services since 1977
1N746-1N759
SILICON PLANAR ZENER DIODES
Rev. 20120328










Скачать PDF:

[ 1N758.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
1N75(1N7x) GOLD BONDED DIODESBC
BC
1N75GOLD BOUNDED GERMANUM DIODENew Jersey Semiconductor
New Jersey Semiconductor
1N75Diode ( Rectifier )American Microsemiconductor
American Microsemiconductor
1N750SILICON ZENER DIODESCDIL
CDIL

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск