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PDF MPSH04 Data sheet ( Hoja de datos )

Número de pieza MPSH04
Descripción AMPLIFIER TRANSISTOR
Fabricantes Motorola Semiconductors 
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MPSH04
MPSH05
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
AMPLIFIER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation T^ = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VEBO
ic
PD
PD
TJ- Tstg
Value
80
4.0
100
625
5.0
1.5
12
-55 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Rqjc
83.3
°C/W
Thermal Resistance, Junction to Ambient
R0JA<D
200
°C/W
C) R flJA is measured with the device soldered into a typical printed circuit board
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
3Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC
=
100 Mdc,
|'e
=
0)
Emitter-Base Breakdown Voltage
(IE = 100 MAdc, Ic = 0)
Collector Cutoff Current
(VcB = 60 Vdc, = 0)
Emitter Cutoff Current
(Veb = 3.0 Vdc, Ic = 0)
- -v(BR)CEO
80
Vdc
- -v(BR)CBO
80
Vdc
- -v(BR)EBO
4.0
Vdc
-'CBO
50 nAdc
'EBO
50 nAdc
DC Current Gain
(Ic = 1.5 mAdc, Vce
10 Vdc)
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 1.0 mAdc)
MPSH04
MPSH05
"FE
vCE(sat)
30
30
120
150
SMALL-SIGNAL CHARACTERISTICS
Crrent-Gain Bandwidth Product
(IC = 1.5 mAdc, Vce = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 10 Vdc, f = 1.0 MHz)
- -fT 80
MHz
- -ccb
1.6 PF
Output Admittance
(IC = 1.5 mAdc, Vce = 10 Vdc, f = 1.0 kHz)
-hoe
5.0 /imhos
Noise Figure
- -NF 2.0 dB
(IC = 15 mAdc, Vqe = 10 Vdc, Rs = 50 ohms, f = 1.0 MHz) MPSH04
(2) Pulse Test: Pulse Width =s 300 jus, Duty Cycle =s 2.0%.
2-240

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