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PDF 2N2720 Data sheet ( Hoja de datos )
| Número de pieza | 2N2720 | |
| Descripción | DUAL AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj. Tstg
Value
60
80
6.0
40
One Die Both Die
0.3
1.71
0.6
3.4
0.6 1.2
3.4 6.8
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watt
mW/°C
°C
2N2720
2N2721
CASE 654-07, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to 2N2060 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged) 0c = 10 mAdc, Bl 0)_
Collector Cutoff Current
Collector Cutoff Current
(VCE = 5.0 Vdc, I.b = 0)
(Vcb = 60 Vdc, Ie = 0)
(VcB = 60 Vdc, l£ = 0, TA
150°C)
Emitter Cutoff Current
(Veb
=
50
vdc
-
'C
=
0>
ON CHARACTERISTICS
DC Current Gain
0c = 100 ^Adc, Vce = 5.0 Vdc)
(IC = 1.0 mAdc, Vqe = 5.0 Vdc)
(IC
=
10 mAdc, Vce
=
50
vdc
>
Collector-Emitter Saturation Voltage (Ic = 10 mAdc, lrj = 1-0 mAdc)
Base-Emitter Saturation Voltage dc = 10 mAdc, Ib = 10 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain
Bandwidth Product
C(l
=
10 mAdc, Vce
=
10 vdc f
>
=
20 MHz)
O utput Capacitance
(VcB
=
50
vdc
-
*E
=
°- f
=
1
° MHz>
Input Impedance
(Ie
=
10
mAdc, Vcb
=
50 vdc f
>
1.0 kHz)
Voltage Feedback Ratio
(Ie
=
10 mAdc, VcB
=
5.0
vdc
-
f
s
10 kHz)
Small-Signal Current Gain dc = 1-0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
Output Admittance (Ie = 10 mAdc, VcB = 5.0 Vdc, f = 1.0 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
c(l = 100 /iAdc, VCe = 5.0 Vdc)
2N2720
2N2721
Base-Emitter Voltage Differential
c(l = 100 AtAdc, Vce = 5.0 Vdc)
2N2720
2N2721
Base-Emitter Voltage Differential Change Due to Temperature
O^r = 100 uAdc, Vce = 5.0 Vdc, TA = -55 to +25°C)
2N2720
2N2721
Symbol
V(BR)CEO
'CEO
'CBO
'EBO
hFE
vce (sat)
VBE(sat)
C bo
hib
hrb
hob
hFE1 /h FE2
|VBE1- v BE2l
A(V BE 1-V BE2 )
O^r = 100 uAdc, VrE = 5.0 Vdc, TA = +25 to + 125°C)
2N2720
2N2721
(1) Pulse Test: Pulse Width « 300 /xs, Duty Cycle « 2.0%.
(2) The lower of the two h FE readings is taken as h FE i for the purpose of measurement.
Min
60
0.65
80
25
30
0.9
0.8
•3Max
Unit
0.01
10
fiAdc
120
0:85
6.0
32
500
Vdc
MHz
pF
ohms
X 10" 6
1.0 /i.mhos
1.0
1.0
mVdc
5.0
10
0.8
1.6
1.0
2.0
5-11
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N2720.PDF ] | |
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