BCW29 PDF даташит
Спецификация BCW29 изготовлена «Motorola Semiconductors» и имеет функцию, называемую «GENERAL PURPOSE TRANSISTOR». |
|
Детали детали
Номер произв | BCW29 |
Описание | GENERAL PURPOSE TRANSISTOR |
Производители | Motorola Semiconductors |
логотип |
1 Pages
No Preview Available ! |
BCW29,30
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
VCBO
vESO
ic
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, T/\ = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
RflJA
mm•Package mounted on 99.5% alumina 10 x 8 x 0.6
Value
20...
30
5,0
100
Max
350
2.8
150
357
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
dC = 2.0 mAdc, Ie = 0)
Collector-Emitter Breakdown Voltage
dC = 100 /uAdc, VEB = 0)
Collector-Base Breakdown Voltage
flC = 10 MAdc, Ic = 0)
Emitter-Base Breakdown Voltage
(IE = 10 /^Adc, Ic = 0)
Collector Cutoff Current
(Vcb = 20 Vdc, El = 0)
(Vcb = 20 Vdc, Ie = 0, Ta = 100T)
ON CHARACTERISTICS
DC Current Gain
dC = 2.0 mAdc, Vce = 5.0 Vdc)
BCW29
BCW30
Collector-Emitter Saturation Voltage
flC = 10 mAdc, Ib = 0.5 mAdc)
Base-Emitter On Voltage
(IC = 2.0 mAdc, Vce = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(IE = 0, Vce = 10 Vdc, f = 1.0 MHz)
Noise Figure
flC = 0.2 mAdc, VCE = 5.0 Vdc, Rs = 2.0 kfl, f = 1.0 kHz,
BW = 200 Hz)
Symbol
[|
Min
I
Max
I
Unit
'
'
v (BR)CEO
20
- Vdc
V(BR)CES
30
- Vdc
v(BR)CB0
30
- Vdc
-v (BR)EBO
5.0
Vdc
-ICBO
100 nAdc
10 fiAdc
"FE
v CE(sat)
v BE(on)
120
215
-
0.6
260
500
0.3
0.75
-
Vdc
Vdc
-Cobo
7.0 pF
—NF 10 dB
3-8
Скачать PDF:
[ BCW29.PDF Даташит ]
Номер в каталоге | Описание | Производители |
BCW29 | PNP general purpose transistors | NXP Semiconductors |
BCW29 | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor |
BCW29 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
BCW29 | PNP General Purpose Transistors | Kexin |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |