DataSheet.es    


PDF MMBTA55 Data sheet ( Hoja de datos )

Número de pieza MMBTA55
Descripción PNP General Purpose Amplifier
Fabricantes MCC 
Logotipo MCC Logotipo



Hay una vista previa y un enlace de descarga de MMBTA55 (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! MMBTA55 Hoja de datos, Descripción, Manual

MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
MMBTA55
THRU
MMBTA56
Features
This device is designed for general purpose amplifier applications at
collector current to 300mA
Marking : MMBTA55=2H/B55, MMBTA56=2GM/B56
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
Maximum Ratings
Symbol
Rating
VCEO Collector-Emitter Voltage
MMBTA55
MMBTA56
VCBO
Collector-Base Voltage
MMBTA55
MMBTA56
VEBO
IC
TJ
TSTG
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
Thermal Characteristics
Rating
60
80
60
80
4.0
500
-55 to +150
-55 to +150
Unit
V
V
V
mA
OC
OC
Symbol
Rating
Max Unit
PD Total Device Dissipation*
Derate above 25OC
225 mW
1.8 mW/OC
RJA Thermal Resistance, Junction to Ambient
556
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage (1)
(IC=1.0mAdc, IB=0)
MMBTA55
MMBTA56
V(BR)EBO
ICBO
ICES
Emitter-Base Breakdown Voltage
(I E=100ì Adc, IC=0)
Collector Cutoff Current
(VCB=60Vdc, IE=0)
(VCB=80Vdc, IE=0)
MMBTA55
MMBTA56
Emitter Cutoff Current
(VCE=60Vdc, IB=0)
ON CHARACTERISTICS
60
80
4.0
---
---
---
--- Vdc
---
--- Vdc
0.1 uAdc
0.1 uAdc
0.1 uAdc
hFE DC Current Gain
(VCE=1.0Vdc, IC=10mAdc)
(VCE=1.0Vdc, IC=100mA)
100 ---
100 ---
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
--- 0.25 Vdc
VBE(on)
Base-Emitter On Voltage
(IC=100mAdc, VCE=1.0Vdc)
--- 1.2 Vdc
fT Current-Gain—Bandwidth Product(2)
(IC=100mAdc, VCE=1.0Vdc, f=100MHz)
50
--- MHz
* FR-5=1.0 X 0.75 X 0.062 in.
1. Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
2. Alumina=0.4 X 0.3 X 0.024 in. 99.5% alumina.
PNP General
Purpose Amplifier
SOT-23
A
D
C
FE
CB
BE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: 5
www.mccsemi.com
1 of 4
2008/01/01

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet MMBTA55.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MMBTA517EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR)KEC(Korea Electronics)
KEC(Korea Electronics)
MMBTA517EPITAXIAL PLANAR NPN TRANSISTORKEC
KEC
MMBTA55PNP General Purpose AmplifierMCC
MCC
MMBTA55PNP General Purpose TransistorBruckewell
Bruckewell

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar