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MMBTA42 PDF даташит

Спецификация MMBTA42 изготовлена ​​​​«PACO» и имеет функцию, называемую «NPN Silicon High Voltage Transistors».

Детали детали

Номер произв MMBTA42
Описание NPN Silicon High Voltage Transistors
Производители PACO
логотип PACO логотип 

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MMBTA42 Даташит, Описание, Даташиты
MMBTA42 / MMBTA43
NPN Silicon High Voltage Transistors
for high voltage switching and amplifier applications.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 10 V, IC = 1 mA
at VCE = 10 V, IC = 10 mA
at VCE = 10 V, IC = 30 mA
Collector Base Cutoff Current
at VCB = 200 V
at VCB = 160 V
Emitter Base Cutoff Current
at VEB = 6 V
at VEB = 4 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 20 mA, IB = 2 mA
Base Emitter Saturation Voltage
at IC = 20 mA, IB = 2 mA
Gain Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector Output Capacitance
at VCB = 20 V, f = 1 MHz
MMBTA42
MMBTA43
MMBTA42
MMBTA43
Symbol
VCBO
VCEO
VEBO
IC
Ptot
RθJA
Tj, Tstg
SOT-23 Plastic Package
Value
300
200
300
200
6
500
350
357
- 55 to + 150
Unit
V
V
V
mA
mW
OC/W
OC
Symbol
hFE
hFE
hFE
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
ICBO
ICBO
IEBO
IEBO
V(BR)CBO
V(BR)CBO
V(BR)CEO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
MMBTA42
MMBTA43
Cob
Min.
25
80
40
-
-
-
-
300
200
300
200
6
-
-
50
-
-
Max.
-
200
-
0.1
0.1
0.1
0.1
-
-
-
-
-
0.5
0.9
-
3
4
Unit
-
-
-
µA
µA
V
V
V
V
V
MHz
pF
Dated : 20/09/2010 Rev:01









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MMBTA42 Даташит, Описание, Даташиты
MMBTA42 / MMBTA43
120
100 TJ=+125°C
VCE =10Vdc
80
60 TJ=25°C
40
TJ=-55°C
20
0
0.1
1.0 10
IC, Collector Current (mA)
100
Figure 1. DC Current Gain
100
10
Ceb @ 1MHz
1
Ccb @ 1MHz
0.1
0.1
1
10 100
VR, Reverse Voltage (volts)
Figure 2. Capacitance
1000
80
70
VCE=20V
f=20MHz
TJ=20°C
60
50
40
30
20
10
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
Ic, Collector Current (mA)
Figure 3. Current-Gain-Bandwidth
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0 10
IC, Collector Current (mA)
Figure 4."on" Voltages
A VBE(sat) @-55°C, IC/IB=10
B VBE(on) @ -55°C,VCE=10V
C VBE(sat) @ 125°C,IC/IB=10
D VBE(sat) @ 25°C,IC/IB=10
E VBE(on) @ 125°C,VCE=10V
F VBE(on) @ 25°C,VCE=10V
G VCE(sat) @ 125°C,IC/IB=10
H VCE(sat) @ 25°C,IC/IB=10
I VCE(sat) @ -55°C,IC/IB=10
100
Dated : 20/09/2010 Rev:01










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