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PDF MMBTA43 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA43 | |
| Descripción | NPN High Voltage Amplifier | |
| Fabricantes | Galaxy Microelectronics | |
| Logotipo |  |
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Production specification
NPN High Voltage Amplifier
FEATURES
z Epitaxial planar die construction.
z Ideal for medium power amplification
and switching.
Pb
Lead-free
MMBTA43
APPLICATIONS
z As a video output to driver color CRT and other high
Voltage application.
ORDERING INFORMATION
Type No.
Marking
MMBTA43
ABX
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
UNIT
VCBO
VCEO
VEBO
IC
PC
Tj ,Tstg
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Collector dissipation
junction and storage temperature
200
200
6
0.2
0.35
-55 to +150
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Cob
fT
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
Collector output capacitance
transition frequency
Test conditions
IC=100μA,IE=0
IC=1.0mA,IB=0
IE=100μA,IC=0
IE = 0; VCB = 160V
IC = 0; VEB = 4V
VCE =10V; IC=1mA
VCE =10V;IC =10mA
VCE =10V;IC =30mA
IC =20mA; IB =2mA
IC =20mA; IB=2mA
VCB=20V,IE=0;f=1.0MHz
IC=10mA; VCE =20V
f=100MHz
MIN.
200
200
6
-
-
25
40
50
-
-
50
MAX.
-
-
-
0.1
0.1
-
-
200
0.4
0.9
4.0
-
UNIT
V
V
V
μA
μA
V
V
pF
MHz
C122
Rev.A
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