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MMBTA14 PDF даташит

Спецификация MMBTA14 изготовлена ​​​​«LITE-ON» и имеет функцию, называемую «NPN MULTI-CHIP TRANSISTOR».

Детали детали

Номер произв MMBTA14
Описание NPN MULTI-CHIP TRANSISTOR
Производители LITE-ON
логотип LITE-ON логотип 

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MMBTA14 Даташит, Описание, Даташиты
NPN MULTI-CHIP TRANSISTOR
FEATURES
Surface mount device
Simplifies circuit design
Reduces board space
Reduces component count
MECHANICAL DATA
Case: SOT-23 plastic
Lead Free in RoHS 2002/95/EC Compliant
• Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
MMBTA13 thru MMBTA14
REVERSE VOLTAGE 30 Volts
FORWARD CURRENT 0.3 Amperes
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
ABSOLUTE RATINGS
PARAMETER
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current-continuous
THERMAL CHARACTERISTICS
PARAMETER
Total device dissipation FR-5 board (Note 1)
Thermal resistance junction to ambient
Total device dissipation alumina substrate (Note 2)
Thermal resistance junction to ambient
@ TA = 25°C
@ TA = 25°C
Junction and storage temperature rang
Note:
1. FR-5 = 1.0 * 0.75 * 0.062 in.
2. Alumina = 0.4 * 0.3 * 0.024 in 99.5% alumina.
ORDERING INFORMATION
DEVICE
MARKING
SHIPPING
MMBTA13
1M 3000/ Tape & Reel
MMBTA14
1N 3000/ Tape & Reel
SYMBOL
VCEO
VCBO
VEBO
IC
SYMBOL
PD
RthJA
PD
RthJA
TJ ,TSTG
VALUE
30
30
10
300
UNIT
Vdc
Vdc
Vdc
mAdc
MAX.
UNIT
225 mW
556 °C/W
300 mW
417 °C/W
-55 to +150
°C
REV-0, MAY.-2015, KSMR01









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MMBTA14 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTIC
MMBTA13 thru MMBTA14
OFF CHARACTERISTICS
PARAMETER
TEST CONDITION
Collector-emitter breakdown
voltage (Note 3)
IC = 100 µ Adc, VBE = 0
MMBTA13
MMBTA14
Collector cutoff current
Emitter cutoff current
VCB = 30 Vdc, IE = 0
VEB = 10 Vdc, IC = 0
MMBTA13
MMBTA14
MMBTA13
MMBTA14
ON CHARACTERISTICS
PARAMETER
TEST CONDITION
DC current gain
IC = 10 mAdc, VCE = 5.0 Vdc
IC = 100 mAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
IC = 100 mAdc, VCE = 5.0 Vdc
Collector-emitter saturation voltage IC = 100 mAdc, IB = 0.1 mAdc
Base-emitter on voltage
IC = 100 mAdc, VCE = 5.0 Vdc
SMALL SIGNAL CHARACTERISTICS
MMBTA13
MMBTA14
MMBTA13
MMBTA14
MMBTA13
MMBTA14
PARAMETER
TEST CONDITION
Current-gain-bandwidth product
(Note 4)
IC = 10 mAdc, VCE = 5.0 Vdc,
f = 100 MHz
MMBTA13
MMBTA14
Note:
3. Pulse Test: pulse width 300 µs, duty cycle 2.0%
4. fT is defined as the frequency at whichh f eextrapolates to unity..
SYMBOL
V(BR)CEO
ICBO
IEBO
SYMBOL
hFE
VCE(SAT)
VBE(SAT)
SYMBOL
fT
MIN.
30
--
--
MIN.
5,000
10,000
10,000
20,000
--
--
MIN.
125
FIG.1 - Transistor noise model
MAX
--
100
100
MAX
--
--
1.5
2.0
MAX
--
UNIT
Vdc
nAdc
nAdc
UNIT
--
Vdc
Vdc
UNIT
MHz









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MMBTA14 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTIC CURVES
MMBTA13 thru MMBTA14
FIG.2 - Noise voltage
FIG.3 - Noise current
f, FREQUENCY (Hz)
FIG.4 - Total wideband noise voltage
f, FREQUENCY (Hz)
FIG.5 - Wideband noise figure
R s, SOURCE RESISTANCE (KΩ)
FIG.6 - Capacitance
R s, SOURCE RESISTANCE ()
VR, REVERSE VOLTAGE (V)










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