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PDF MMBTA13 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA13 | |
| Descripción | DARLINGTON AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter VoKage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCES
VCBO
VEBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, T/\ = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Vakie
30
30
10
300
Max
350
2.8
150
357
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
MMBTA13,14
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
DARLINGTON AMPLIFIER
TRANSISTOR
NPN SILICON
Refer to 2N6426 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 100pAdc,lB = 0)
Collector Cutoff Current
(VcB = 30 Vdc, Ig = 0)
Emitter Cutoff Current
(Vbe = 10 Vdc, Ic = 0)
ON CHARACTERISTICSCn
DC Current Gain
(IC = 10 mAdc, Vce = 5.0 Vdc)
MMBTA13
MMBTA14
(IC = 100 mAdc, VcE = 5.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, Ib = 0-1 mAdc)
Base-Emitter On Voltage
dC = 100 mAdc, VcE = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product(2)
(IC = 10 mAdc, Vce = 5.0 Vdc, f = 100 MHz)
(1) Pulse Test: Pulse Width =s 300 /is. Duty Cycle =£ 2.0%.
(2)fj = Ihfel-W
MMBTA13
MMBTA14
Symbol
V (BR)CES
'CBO
!eBO
Min
Max
Unit
nAdc
100 nAdc
hFE
v CE(sat)
VBE
5000
10,000
10,000
20,000
1.5
2.0
Vdc
MHz
3-105
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMBTA13.PDF ] | |
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