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BDB06 PDF даташит

Спецификация BDB06 изготовлена ​​​​«Motorola Semiconductors» и имеет функцию, называемую «ONE WATT AMPLIFIER TRANSISTORS».

Детали детали

Номер произв BDB06
Описание ONE WATT AMPLIFIER TRANSISTORS
Производители Motorola Semiconductors
логотип Motorola Semiconductors логотип 

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BDB06 Даташит, Описание, Даташиты
BDB06
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
ONE WATT
AMPLIFIER TRANSISTOR
PIMP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tq - 25°C
Derate above 25 °C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T st g
Symbol
RflJC
Rejc
Value
80
80
5.0
1.0
1.0
8.0
2.5
20
-55 to +150
Max
50
125
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mA, Ib = 0)
Collector-Base Breakdown Voltage
C(l = 10 uA, El = 0)
Emitter-Base Breakdown Voltage
(l E = 10uA, Cl = 0)
Emitter Cutoff Current
(V B E = 5 Vdc, Cl = 0)
Collector Cutoff Current
(V C B = 50 V, El = 0)
(VcB = 50 V, Ie = 0, Ta = 150°C)
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mA, VCE = 5 V)
dC = 100 mA, Vce = 5 Vdc)
(lC = 500 mA, Vce = 5 Vdc) (1)
dC = 1 A, Vce = 5 Vdc) (1)
Collector-Emitter Saturation Voltage (1)
(lC = 1 50 mAdc, Ib = 1 5 mAdc)
(lC = 500 mAdc, Ib = 50 mAdc)
Base-Emitter Saturation Voltage (1)
(lC = 1 50 mAdc, Ib = 1 5 mAdc)
Base-Emitter On Voltage
(lC = 500 mAdc, Vce = 0.5 V)
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(lC = 50 mAdc, Vce = 10 Vdc)
Output Capacitance
(VcB = 1 Vdc, Ie = 0, f = 1 MHz)
Input Capacitance
(Vbe = 2.0 Vdc, Ic = 0, f = 1 MHz)
Turn on Time
(Vce =: 30 V, Ic = 500 mA)
IB = 50 mA)
Turn off Time
(1) Pulse Test: Pulse width < 300 uS
Duty Cycle < 2",
Symbol
v (BR)CE0
V(BR)CB0
V(BR)EB0
lEBO
ICBO
HFE
VCE(sat)
VBE(sat)
VBE(on)
fr
Cob
Cib
Ton
Toff
Min
80
80
5
75
100
70
25
150
Max
10
50
50
V
V
V
uA
nA
uA '
300
0.15
0.5
0.9
1.1
20
110
100
400
Vdc
V
V
MHz
PF
PF
ns
2-144










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