DataSheet26.com

BDB05 PDF даташит

Спецификация BDB05 изготовлена ​​​​«Motorola Semiconductors» и имеет функцию, называемую «ONE WATT HIGH VOLTAGE TRANSISTOR».

Детали детали

Номер произв BDB05
Описание ONE WATT HIGH VOLTAGE TRANSISTOR
Производители Motorola Semiconductors
логотип Motorola Semiconductors логотип 

1 Pages
scroll

No Preview Available !

BDB05 Даташит, Описание, Даташиты
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T s tg
Symbol
R«JC
Rwc
Value
80
120
7.0
1.0
1.0
8.0
2.5
20
-55 to +150
Max
50
125
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BDB05
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
ONE WATT
HIGH VOLTAGE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 30 mA, Ib = 0)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(IE = lOOuAdc, Ic = 0)
Collector Cutoff Current
(VcB = 90 Vdc, IE = 0)
(VcB = 90 Vdc, Ie = 0, Ta = 150°C)
Emitter Cutoff Current
(Vbe = 5 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, Vce = 10 Vdc)
(IC = 10 mAdc, Vce = 10 Vdc)
(IC = 1 50 mAdc, VcE = 10 Vdc)
(IC = 500 mAdc, VcE = 10 Vdc) (1)
(IC = 1 mAdc, Vce = 10 Vdc) (1)
Collector Emitter Saturation Voltage (1)
(IC = 1 50 mAdc, Ib = 15 mAdc)
(IC = 500 mAdc, Ib = 50 mAdc)
Base Emitter Saturation Voltage (1)
(IC = 150 mAdc, Ib = 1 5 mAdc)
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(IC = 50 mAdc, Vce = 1 Vdc, f = 20 MHz)
Output Capacitance
(VcB = 10 Vdc, Ie = 0, f = 1 MHz)
Input Capacitance
(Vbf = 0.5 Vdc, Ic = 0, f = 1 MHz)
Small Signal Current Gain
(IC = 1 mAdc, Vce = 5 Vdc, f = 1 KHz)
(1) Pulse Test: Pulse width < 300 uS
duty cycle < 2%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
lEBO
HFE
VCE(sat)
VBE(sat)
fT
Cob
Cjb
hfe
80
120
7.0
50
90
100
50
15
100
80
Max
10
10
10
300
0.2
0.5
1.1
12
60
Vdc
Vdc
Vdc
nA
HA
nA
Vdc
Vdc
MHz
PF
pF
400
2-143










Скачать PDF:

[ BDB05.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BDB01One Watt Amplifier TransistorsMotorola  Inc
Motorola Inc
BDB01AONE WATT AMPLIFIER TRANSISTORSMotorola Semiconductors
Motorola Semiconductors
BDB01BONE WATT AMPLIFIER TRANSISTORSMotorola Semiconductors
Motorola Semiconductors
BDB01COne Watt Amplifier TransistorsMotorola  Inc
Motorola Inc

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск