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PDF BCX50 Data sheet ( Hoja de datos )
| Número de pieza | BCX50 | |
| Descripción | HIGH CURRENT TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol BCX BCX BCX
46 48 50
VCEO
VCBO
VEBO
45 60 80
45 60 80
5.0
ic 1.0
PD 625
5.0
pd
Tj, T stg
1.5
12
-55 to +150
Symbol
R«JC
Rwc
Max
83.3
200
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
BCX46
BCX48
BCX50
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
HIGH CURRENT TRANSISTORS
PIMP SILICON
Refer to MPSA55 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
(IC = 10 mAdc, Ib = 0)
BCX46
BCX48
BCX50
V(BR)CE0
Collector-Base Breakdown Voltage
OC = 100 (iAdc, Ie = 0)
BCX46
BCX48
BCX50
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 uAdc, Ic = 0)
V(BR)EBO
Collector Cutoff Current
(Vcb = 30 Vdc - Ie = 0)
(Vcb = 40 Vdc - Ie = 0)
(Vcb = 60 vdc - ie = 0)
ON CHARACTERISTICS*
BCX46
BCX48
bcxso
ICB0
DC Current Gain
dC = 1 mAdc, Vce = 2.0 Vdc)
dC = 1 00 mAdc, Vce = 2.0 Vdc)
dC = 500 mAdc, Vce = 2.0 Vdc)
dC = 1 Adc, Vce = 5.0 Vdc)
h FE
Collector-Emitter Saturation Voltage
(IC = 500 mAdc, \q = 50 mAdc)
(IC = 1 Adc, Ib = 100 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 500 mAdc, Ib = 50 mAdc)
Base-Emitter On Voltage
dC = 500 mAdc, Vce = 2.0 Vdc)
' Pulse test-Pulse width =£ 300 us - Duty cycle 2%
VBE(sat)
VBE(on)
Min.
Typ.
|
45
60
80
45
60
80
5.0
40 130
50 140
30 60
15
0.25
0.3
0.9
0.85
Max.
Unit
Vdc
Vdc
Vdc
nAdc
100
100
100
Vdc
0.5
Vdc
Vdc
1.2
2-129
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCX50.PDF ] | |
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