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BCX46 PDF даташит

Спецификация BCX46 изготовлена ​​​​«Motorola Semiconductors» и имеет функцию, называемую «HIGH CURRENT TRANSISTORS».

Детали детали

Номер произв BCX46
Описание HIGH CURRENT TRANSISTORS
Производители Motorola Semiconductors
логотип Motorola Semiconductors логотип 

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BCX46 Даташит, Описание, Даташиты
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol BCX BCX BCX
46 48 50
VCEO
VCBO
VEBO
45 60 80
45 60 80
5.0
ic 1.0
PD 625
5.0
pd
Tj, T stg
1.5
12
-55 to +150
Symbol
R«JC
Rwc
Max
83.3
200
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
BCX46
BCX48
BCX50
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
HIGH CURRENT TRANSISTORS
PIMP SILICON
Refer to MPSA55 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
(IC = 10 mAdc, Ib = 0)
BCX46
BCX48
BCX50
V(BR)CE0
Collector-Base Breakdown Voltage
OC = 100 (iAdc, Ie = 0)
BCX46
BCX48
BCX50
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 uAdc, Ic = 0)
V(BR)EBO
Collector Cutoff Current
(Vcb = 30 Vdc - Ie = 0)
(Vcb = 40 Vdc - Ie = 0)
(Vcb = 60 vdc - ie = 0)
ON CHARACTERISTICS*
BCX46
BCX48
bcxso
ICB0
DC Current Gain
dC = 1 mAdc, Vce = 2.0 Vdc)
dC = 1 00 mAdc, Vce = 2.0 Vdc)
dC = 500 mAdc, Vce = 2.0 Vdc)
dC = 1 Adc, Vce = 5.0 Vdc)
h FE
Collector-Emitter Saturation Voltage
(IC = 500 mAdc, \q = 50 mAdc)
(IC = 1 Adc, Ib = 100 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 500 mAdc, Ib = 50 mAdc)
Base-Emitter On Voltage
dC = 500 mAdc, Vce = 2.0 Vdc)
' Pulse test-Pulse width 300 us - Duty cycle 2%
VBE(sat)
VBE(on)
Min.
Typ.
|
45
60
80
45
60
80
5.0
40 130
50 140
30 60
15
0.25
0.3
0.9
0.85
Max.
Unit
Vdc
Vdc
Vdc
nAdc
100
100
100
Vdc
0.5
Vdc
Vdc
1.2
2-129









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BCX46 Даташит, Описание, Даташиты
BCX46, BCX48, BCX50
ELECTRICAL CHARACTERISTICS (continued) (Ta = 25 °C unless otherwise noted)
Characteristic
SMALL SIGNAL CHARACTERISTICS
Symbol
Min.
Current Gain-Bandwidth Product
dC = 50 mAdc, VcE = 2.0 Vdc, f = 50 MHz)
Output Capacitance - Common Base
(VCB = 10 Vdc, f = 1.0 MHz)
Input Capacitance - Common Base
(VCB = 0.5 Vdc, f = 1.0 MHz)
fT
Cb
Cib
60
Input Impedance
dC = 10 mAdc, VcE = 2.0 Vdc, f = 1 .0 KHz)
hie
Voltage Feedback Ratio
dC = 1 mAdc, VcE = 2.0 Vdc, f = 1 .0 KHz)
hre
Small-Signal Current Gain
dC = 1 mAdc, Vce = 2.0 Vdc, f = 1 .0 KHz)
hfe
Output Admittance
dC = 1 mAdc, Vce = 2.0 Vdc, f = 1 .0 KHz)
V =3Turn - On delay Time (VBE(off) = 0-5 bI 1
mA|
(Vce = 40 Vdc, lc = 250 mAdc (see Figure 1)
Rise Time (VeE(off) = 0.5 V, bI 1 = 3 mA)
(Vce = 40 Vdc, lc = 250 mAdc (see Figure 1)
Storage Time ( b 1 = lB2 = 3 mA)
(Vce = 40 Vdc, lc = 250 mAdc (see Figure 1)
h 0c
td
tr
ts
Fall Time (Ib 1 = lB2 = 3 mA)
(Vce = 40 Vdc, lc = 250 mAdc (see Figure 1)
tf
Typ.
130
9.0
no
700
-4
1.7-10
160
1 10
12
28
330
50
FIGURE 1 - SWITCHING TIME TEST CIRCUITS
VCC +1V
15
Unit
MHz
PF
PF
ohms
jimho
ns
ns
ns
ns
+ 10V I
J
PW 5/is
DC 2%
t <3ns
r
I
"LP-10Vl
1
Toff Test Circuit
Cg total shunt capacitance of test jig and connectors
Cs <6pF
FIGURE 2 - DC CURRENT GAIN
300
200
I I I II
VCE =2 VOLTS
100
50
30
20
10
23
5
10 20 30 50 100 200
500 1000
cl , Collector Current (mA)
2-130










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