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BCX49 PDF даташит

Спецификация BCX49 изготовлена ​​​​«Motorola Semiconductors» и имеет функцию, называемую «HIGH CURRENT TRANSISTORS».

Детали детали

Номер произв BCX49
Описание HIGH CURRENT TRANSISTORS
Производители Motorola Semiconductors
логотип Motorola Semiconductors логотип 

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BCX49 Даташит, Описание, Даташиты
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T stg
Symbol
R«JC
R^jc
BCX BCX BCX
45 47 49
45 60 80
45 60 80
5.0
1.0
625
5.0
1.5
12
-55 to +150
Max
83.3
200
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BCX45
BCX47
BCX49
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
HIGH CURRENT TRANSISTORS
NPN SILICON
Refer to MPSA05 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
dC = 10 mAdc, Ib = 0)
BCX45
BCX47
BCX49
V(BR)CE0
Collector-Base Breakdown Voltage
(IC = 1 00 uAdc, Ie = 0)
BCX45
BCX47
BCX49
V(BR)CB0
Emitter-Base Breakdown Voltage
(IE = 10 uAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 30 Vdc - = 0)
(Vcb = 40 Vdc - Ie = 0)
(Vcb = 60 Vdc - Ie = 0)
BCX45
BCX47
BCX49
ON CHARACTERISTICS*
V(BR)EB0
ICBO
DC Current Gain
dC = 1 mAdc, Vce = 2.0 Vdc)
(IC = 1 00 mAdc, Vce = 2.0 Vdc)
(IC = 500 mAdc, Vce = 2.0 Vdc)
(IC = 1 Adc, Vce = 5.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(IC = 500 mAdc, \q = 50 mAdc)
(IC = 1 Adc, Ib = 100 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 500 mAdc, Ib = 50 mAdc)
Base-Emitter On Voltage
(IC = 500 mAdc, VcE = 2.0 Vdc)
' Pulse test-Pulse width < 300 us - Duty cycle 2%
VBE(sat)
VBE(on)
Min.
45
60
80
45
60
80
5.0
40
50
30
15
Typ.
Max.
|
Unit
\
Vdc
Vdc
Vdc
nAdc
100
100
100
130
140
60
0.2
0.3
0.85
0.85
0.5
1.2
Vdc
Vdc
Vdc
2-127









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BCX49 Даташит, Описание, Даташиты
I
BCX45, BCX47, BCX49
ELECTRICAL CHARACTERISTICS (continued) (Ta = 25 °C unless otherwise noted)
Characteristic
SMALL SIGNAL CHARACTERISTICS
Symbol
Current Gain-Bandwidth Product
dC = 50 mAdc, Vqe = 2.0 Vdc, f = 1 00 MHz)
Output Capacitance - Common Base
(V C B = 10 Vdc, f = 1.0 MHz)
Input Capacitance - Common Base
(Vcb =; 0.5 Vdc, f = 1.0 MHz)
fT
Cob
Cib
100
Input Impedance
dC = 1 mAdc, Vce = 2.0 Vdc, f = 1 .0 KHz)
hie
Voltage Feedback Ratio
dC = 1 mAdc, Vce = 2.0 Vdc, f = 1 .0 KHz)
hre
Small-Signal Current Gain
(IC = 1 mAdc, Vce = 2.0 Vdc, f = 1 .0 KHz)
hfe
Output Admittance
(IC = 1 mAdc, Vce = 2.0 Vdc, f = 1 .0 KHz)
hoe
Turn - On delay Time (VBE(off) = 0.5 V, bI 1 = 3 mA)
(Vce = 40 Vdc, lc = 250 mAdc (see Figure 1)
=3Rise Time (VBE(off) = 0.5 V, bI 1
mA)
(Vce = 40 Vdc, lc = 250 mAdc (see Figure 1)
Storage Time (Ibi = lB2 = 3 mA)
(Vce = 40 Vdc, lc = 250 mAdc (see Figure 1)
Fall Time ( b 1 = 'B2 = 3 mA)
(Vce = 40 Vdc, lc = 250 mAdc (see Figure 1)
td
tr
ts
tf
Typ.
200
7.0
50
530
1.1-10~ 4
120
58
10
20
330
50
Max.
12
Unit
MHz
pF
pF
ohms
nmho
ns
ns
ns
ns
VCC
40V
160ft
PW 5/Us
DC 27o
t r <3ns
T FF Test Circuit
Cg total shunt capacitance of test jig and connectors
Cs <6pF
t qn Test circuit
FIGURE 2 - DC CURRENT GAIN
100
c
3 70
c
m 50
o3
o
Q
UJ
u.
-C
20
v CE >\K>LTS L^
I
j
I
|
1210
5 10 20
50
\q, Collector Current (mA)
100 200
500 1000
2-128










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