MPQ3798 PDF даташит
Спецификация MPQ3798 изготовлена «Motorola Semiconductors» и имеет функцию, называемую «Quad Amplifier Transistor». |
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Детали детали
Номер произв | MPQ3798 |
Описание | Quad Amplifier Transistor |
Производители | Motorola Semiconductors |
логотип |
3 Pages
No Preview Available ! |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier Transistors
PNP Silicon
14 13 12 11 10 9 8
PNP
1234567
MAXIMUM RATINGS
Rating
Symbol
MPQ3798
MPQ3799
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCBO
VEBO
IC
–40 –60
–60
–5.0
–50
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation
@ TA = 25°C(1)
Derate above 25°C
PD
0.5
4.0
0.9 Watts
7.2 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
0.825
6.7
2.4 Watts
19.2 m/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
RqJC
Junction
to Case
RqJA
Junction
to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151 250 °C/W
52 139 °C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
34
2.0
70 %
26 %
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
MPQ3798
MPQ3799
V(BR)CEO
–40
–60
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
V(BR)CBO
V(BR)EBO
ICBO
IEBO
–60
–5.0
—
—
v v1. Second breakdown occurs at power levels greater than 3 times the power dissipation rating.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MPQ3798
MPQ3799*
*Motorola Preferred Device
14
1
CASE 646–06, STYLE 1
TO–116
Typ Max Unit
Vdc
——
——
— — Vdc
— — Vdc
— –10 nAdc
— –20 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–489
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MPQ3798 MPQ3799
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = –10 mAdc, VCE = –5.0 Vdc)
MPQ3798
MPQ3799
hFE
(IC = –100 mAdc, VCE = –5.0 Vdc)
MPQ3798
MPQ3799
(IC = –500 mAdc, VCE = –5.0 Vdc)
MPQ3798
MPQ3799
(IC = –10 mAdc, VCE = –5.0 Vdc)
MPQ3798
MPQ3799
Collector – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
(IC = –1.0 mAdc, IB = –100 mAdc)
Base – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
(IC = –1.0 mAdc, IB = –100 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –1.0 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = –100 mAdc, VCE = –10 Vdc, RS = 3.0 k ohms,
f = 1.0 kHz)
MPQ3798
MPQ3799
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
NF
Min Typ Max Unit
—
100 —
—
225 —
—
150 —
300 —
—
—
150 —
300 —
—
—
125 —
250 —
—
—
Vdc
—
–0.12
–0.2
—
–0.07
–0.25
Vdc
—
–0.62
–0.7
—
–0.68
–0.8
60 250 — MHz
— 2.1 4.0 pF
— 5.5 8.0 pF
dB
— 2.5 —
— 1.5 —
2–490
Motorola Small–Signal Transistors, FETs and Diodes Device Data
No Preview Available ! |
MPQ3798 MPQ3799
1000 1000
500 500
200 200
100 100
10
0.01
0.1 1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain versus
Collector Current
100
10
0.01
0.1 1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain versus
Collector Current
100
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
0
0.01
VCE(sat) @ IC/IB = 10
0.1 1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
0
100 0.01
VCE(sat) @ IC/IB = 10
0.1 1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 4. “ON” Voltages
100
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–491
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MPQ3799 | Quad Amplifier Transistor | Motorola Semiconductors |
MPQ3799 | PNP SILICON QUAD TRANSISTOR | Central Semiconductor |
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