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PDF P2N2907A Data sheet ( Hoja de datos )

Número de pieza P2N2907A
Descripción Amplifier Transistor
Fabricantes ON Semiconductor　
Logotipo ON Semiconductor Logotipo



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P2N2907A
Amplifier Transistor
PNP Silicon
Features
• These are Pb--Free Devices*
MAXIMUM RATINGS
Rating
Collector--Emitter Voltage
Collector--Base Voltage
Emitter--Base Voltage
Collector Current -- Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
--60
--60
--5.0
--600
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
--55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Thermal Resistance, Junction to Case
RθJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO--92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
P2N2
907A
AYWW G
G
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 -- Rev. 6
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
P2N2907AG
TO--92
5000 Units / Bulk
(Pb--Free)
P2N2907ARL1G TO--92 2000 / Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
P2N2907A/D

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P2N2907A pdf
P2N2907A
TYPICAL SMALL--SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10 10
f = 1.0 kHz
8.0 8.0
6.0 IC = --1.0 mA, Rs = 430 Ω
--500 mA, Rs = 560 Ω
--50 mA, Rs = 2.7 kΩ
4.0 --100 mA, Rs = 1.6 kΩ
6.0
4.0
2.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
IC = --50 mA
--100 mA
--500 mA
--1.0 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
50 100
050 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k
Rs, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
50 k
30
20 Ceb
10
7.0
5.0 Ccb
3.0
2.0
--0.1
--0.2 --0.3 --0.5 --1.0 --2.0 --3.0 --5.0 --10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
--2--030
400
300
200
100
80 VCE = --20 V
60 TJ = 25°C
40
30
20
--1.0 --2.0
--5.0 --10 --20 --50 --100 --200
IC, COLLECTOR CURRENT (mA)
--500 --1000
Figure 10. Current--Gain -- Bandwidth Product
--1.0
TJ = 25°C
--0.8
--0.6
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = --10 V
--0.4
--0.2
0
--0.1 --0.2
VCE(sat) @ IC/IB = 10
--0.5 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200
IC, COLLECTOR CURRENT (mA)
--500
Figure 11. “On” Voltage
+0.5
0
RθVC for VCE(sat)
--0.5
--1.0
--1.5
--2.0 RθVB for VBE
--2.5
--0.1 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 --500
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
http://onsemi.com
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