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PDF MPSA43 Data sheet ( Hoja de datos )
| Número de pieza | MPSA43 | |
| Descripción | NPN High Voltage Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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MPSA43
NPN High Voltage Amplifier
• This device is designed for application as a video output to drive color
CRT and other high voltage applications.
• Sourced from process 48.
• See MPSA42 for characteristics.
1 TO-92
Absolute Maximum Ratings * TA=25°C unless otherwise noted
1. Emitter 2. Base 3. Collector
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
200
VCBO
Collector-Base Voltage
200
VEBO
Emitter-Base Voltage
6.0
IC
Collector Current
- Continuous
200
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage *
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics *
IC = 1.0mA, IB = 0
IC = 100µA, IE = 0
IC = 100µA, IC = 0
VCB = 160V, IE = 0
VEB = 4.0V, IC = 0
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics *
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
IC = 20mA, IB = 2.0mA
IC = 20mA, IB = 2.0mA
fT Current Gain Dandwidth Product
Ccb Collector-Base Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
IC = 10mA, VCE = 20V, f = 100MHz
VCB = 20V, IE = 0, f = 1.0MHz
Min.
200
200
6.0
25
40
50
50
Max. Units
V
V
V
0.1 µA
0.1 µA
200
0.4 V
0.9 V
MHz
4.0 pF
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MPSA43.PDF ] | |
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