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3N156 PDF даташит

Спецификация 3N156 изготовлена ​​​​«Motorola Semiconductors» и имеет функцию, называемую «MOSFET SWITCHING».

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Номер произв 3N156
Описание MOSFET SWITCHING
Производители Motorola Semiconductors
логотип Motorola Semiconductors логотип 

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3N156 Даташит, Описание, Даташиты
3N155
3N156
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
MOSFET
SWITCHING
P-CHANNEL ENHANCEMENT
Refer to 3N157 for graphs.
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Junction Temperature Range
Storage Channel Temperature Range
Symbol
vDs
vdg
Vgs
id
pd
Tj
T
Stfl
Value
±35
±50
±50
30
300
2.0
-65 to +175
-65 to +175
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/X
°C
°c
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (Id = -10 /uAdc, Vq = Vs = 0)
Zero-Gate-Voltage Drain Current (Vds = -10 Vdc, Vqs = °>
(Vqs = -10 Vdc, Vqs = 0, Ta = 125°C)
Gate Reverse Current (Vqs = +50 Vdc, Vqs = 0)
(Vqs = +25Vdc, V DS = 0)
Resistance Drain Source (Irj = 0, Vqs = 0)
Resistance Gate Source Input (Vqs = -25 Vdc)
Gate Forward Leakage Current
ON CHARACTERISTICS
(Vqs = -50 Vdc, Vqs = 0)
(VGS = -25 Vdc, VDS = 0)
Gate Threshold Voltage (Vqs = -10 Vdc, Irj = -10 ^tAdc)
Drain-Source On-Voltage (Id = -2.0 mAdc, Vqs = -10 Vdc)
Static Drain-Source On Resistance (Id = mAdc, Vqs = - 10 Vdc)
On-State Drain Current (Vps = - 15 Vdc, Vqs = - 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Drain-Source Resistance
(VGS = - 10 Vdc, Id = 0, f = 1.0 kHz)
(VGS = -15 Vdc, Id = O, f = 1.0 kHz)
Forward Transfer Admittance
(Vds = -15 Vdc, Dl = -2.0 mAdc, f = 1.0 kHz)
Input Capacitance
(Vds = - 15 Vdc, VGS = - 10 Vdc, f = 140 kHz)
Reverse Transfer Capacitance
(V DS = 0, Vqs = 0, f = 140 kHz)
Drain-Substrate Capacitance
< VD(SUB) = -10 Vdc, f = 140 kHz)
SWITCHING CHARACTERISTICS
Turn-On Delay
Rise Time
Turn-Off Delay
(Vdd = -10 Vdc, lofon) = -2.0 mAdc,
v GS(on) = "lOVdc, VQS(off) = 0)
Fall Time
Symbol Min Typ Max
V(BR)DSX
IDSS
'GSS
TJS(off)
Rgs
'G(f)
-35
1 x10 +1
1 x 10+16
-1.0
-1000
+ 1000
+ 10
-
-
-1000
-10
VGS(Th)
-1.5
-3.2
v DS(on)
-
-1.0
rDS(on)
600
lD(on)
-5.0
-
-
r ds(on)
-
- 400
IVfsl
350
1000
4000
Ciss
5.0
Crss
— — 1.3
— —Cd(sub)
4.0
td 45
V - — 65
ts 60
- -tf 100
Unit
Vdc
nAdc
pAdc
Ohms
Ohms
pAdc
Vdc
Vdc
Ohms
mAdc
Ohms
iimhos
pF
pF
PF
/AS
ns
ns
ns
6-76










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