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PDF MMBTA05 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA05 | |
| Descripción | NPN Small Signal Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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 1. - 60V, 500mA, NPN Transistor  Hay una vista previa y un enlace de descarga de MMBTA05 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Small Signal Product
MMBTA05
Taiwan Semiconductor
300mW, NPN Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260oC/10s
- Weight: 0.008g (approximately)
- Marking Code: 1H
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Collector Base Voltage
VCBO
60
Collector Emitter Voltage
VCEO
60
Emitter Base Voltage
VEBO
4
Collector Current- Continuous
IC 0.5
Collector Power Dissipation
PC 300
Junction Temperature
TJ 150
Storage Temperature Range
TSTG
- 55 to +150
PARAMETER
Collector Base Breakdown Voltage
at IC=100uA, IE=0
Collector Emitter Breakdown Voltage
at IC=1mA, IB=0
Emitter Base Breakdown Voltage
at IE=100uA, IC=0
Collector Cutoff Current
at VCB=60V, IE=0
Collector Cutoff Current
at VCE=60V, IB=0
Emitter Cutoff Current
at VEB=3V, IC=0
DC Current Gain
at VCE=1V, IC=10mA
at VCE=1V, IC=100mA
Collector Emitter
Saturation Voltage
at IC=50mA, IB=5mA
Base-emitter Voltage
Transition Frequency
at VCE=1V, IC=100mA
at VCE=2V, IC=10mA, f=100MHz
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
hFE
VCE(sat)
VBE
fT
MIN
60
60
4
-
-
-
100
100
-
-
100
MAX
-
-
-
0.1
0.1
0.1
400
-
0.25
1.2
-
UNIT
V
V
V
A
mW
°C
°C
UNIT
V
V
V
μA
μA
μA
V
V
MHz
Document Number: DS_S0000015
Version: B15
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBTA05.PDF ] | |
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