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PDF MMBTA05 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA05 | |
| Descripción | DRIVER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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 1. - 60V, 500mA, NPN Transistor  Hay una vista previa y un enlace de descarga de MMBTA05 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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MMBTA05,06
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
DRIVER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
VCBO
Vebo
ic
Value
MMBTA05 MMBTA06
60 80
60 80
4.0
500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, Ta = 25°C
Derate above 25"C
Symbol
PD
Storage Temperature
Tstg
*Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Max
350
2.8
150
357
Unit
mW
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged)
dC = 1.0 mAdc, Ib = 0)
MMBTA05
MMBTA06
Emitter-Base Breakdown Voltage
(Ie = 100 /"Adc, Ic = 0)
Collector Cutoff Current
(VCE = 60 Vdc, Ib = 0)
Collector Cutoff Current
(Vcb = 60 Vdc, lg = 0)
(Vqb = 80 Vdc, Ie = 0)
ON CHARACTERISTICS
MMBTA05
MMBTA06
DC Current Gain
(IC = 10 mAdc, Vce = 1.0 Vdc)
dC = 100 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
flC = 100 mAdc, Ib = 10 mAdc)
Base-Emitter On Voltage
.
dC = 100 mAdc, Vce = 1.0 Vdc)
—Current-Gain Bandwidth Product(2)
dp = 10 mA, Vqe = 2.0 V, f = 100 MHz)
(1) Pulse Test: Pulse Width «e 300 ^s, Duty Cycle =s 2.0%.
(2) fj is defined as the frequency at which |hfe | extrapolates to unity.
Symbol
v (BR)CEO
v (BR)EBO
!CEO
'CBO
Min
60
80
4.0
"FE
v CE(sat)
VBE(on)
50
50
-
—
Max
0.1
0.1
0.1
-
0.25
1.2
3
Vdc
Vdc
/uAdc
/uAdc
-
Vdc
Vdc
3-104
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMBTA05.PDF ] | |
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