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PDF MRF229 Data sheet ( Hoja de datos )
| Número de pieza | MRF229 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MRF229 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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MRF229
MRF230
MRF229
CASE 79-03, STYLE 5
MRF230
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
f
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tc = 25°C(1)
Derate above 25°C
Storage Temperature
Symbol
v CEO
VCBO
VEBO
•c
PD
Tstg
Value
18
36
4.0
0.5
5.0
28.6
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/X
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Rex
35
°C/W
(1) These devices are designed for RF operation. The total device dissipation rating
applies only when the devices are operated as Class C RF Amplifiers.
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 25 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage
dC = 25 mAdc, V BE = 0)
Emitter-Base Breakdown Voltage
E(l = 0.25 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, l£ = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 250 mAdc, Vqe
5.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
(Vcb = 12.5 Vdc, El = 0, f = 1.0 MHz)
FUNCTIONAL TEST (FIGURE 1)
Common-Emitter Amplifier Power Gain
(Vcc = 12.5 Vdc, Pout = 1.5 W, f = 90 MHz)
Collector Efficiency
(Vqc = 12.5 Vdc, Pout = 1.5 W, f = 90 MHz)
Load Mismatch
(Vcc = 12.5 Vdc, Pout = 1.5 W, f = 90 MHz, Tc « 25°C)
Symbol
v (BR)CEO
V(BR)CES
V(BR)EBO
'CBO
18
36
4.0
—
Max
— Vdc
— Vdc
— Vdc
0.5 mAdc
hFE
C bo
Gp E
V
5.0
— 25 pF
—10 dB
55 — %
VSWR > 30:1 Through All Phase
Angles in 3 Second Interval
After Which Devices Will Meet
Gpe Test Limits
7-140
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MRF229.PDF ] | |
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