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Datasheet F11F60CPM Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | F11F60CPM | Power MOSFET, Transistor F11F60CPM
PowerMOSFET
■外観図 OUTLINE Package：FTO-220A（3pin）
600V11A
特長
煙低オン抵抗 煙絶縁タイプ
Feature
煙 LowRON 煙 IsolatedPackage
0000
11F60CPM
Unit：mm
外形図については新電元 Webサイトをご参照下さい。捺印表示については捺 印仕 |  SHINDENGEN | mosfet |
F11 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | F1100 | RF to IF Dual Downconverting Mixer RF to IF Dual Downconverting Mixer
GENERAL DESCRIPTION
This document describes the specifications for the IDTF1100 Zero-DistortionTM RF to IF Downconverting Mixer. This device is part of a series of downconverting mixers covering all UTRA bands. See the Part# Matrix for the details of all devices in  Integrated Device Technology data | | |
| 2 | F1100C | 5V FR-4 Surface Mount Crystal Clock Oscillators
F1100C Series
5V FR-4 Surface Mount Crystal Clock Oscillators
FR-4 Based SMT 65MHz to 105MHz Frequency Range -10oC to 70oC Operating Temperature ”M” Models Operate from -40oC to 85oC 40/60% Symmetry Standard 45/55% Available ±100ppm Stability Standard Tighter  Champion oscillator | | |
| 3 | F1100E | 5.0V TTL CLOCK OSCILLATOR 5.0V TTL CLOCK OSCILLATOR
MODEL: F1100E
FEATURES
• 5.0V Operation • TTL Output • 14-Pin DIP
• PART NUMBER SELECTION Learn More - Internet Required
Part Number 049-Frequency-xxxxx 343-Frequency-xxxxx 060-Frequency-xxxxx 061-Frequency-xxxxx 055-Frequency-xxxxx 465-Frequency-xxxxx Frequency O  Fox Electronics oscillator | | |
| 4 | F1107 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly  Polyfet RF Devices transistor | | |
| 5 | F1108 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 6 | F1116 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 7 | F1120 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for great Polyfet RF Devices transistor | |
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