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PDF P10B28HP2 Data sheet ( Hoja de datos )
| Número de pieza | P10B28HP2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | SHINDENGEN | |
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Nch
P10B28HP2
280V 10A
Power MOSFET
OUTLINE
Package FB
P10B28H2
000000
Unit : mm
Feature
（②④）
（①）
（③）
RATINGS
Absolute Maximum Ratings
For details of the outline dimensions, refer to our web site. As for the
marking, refer to the specification “Marking, Terminal Connection”.
Item Symbol
Conditions
Storage Temperature
Channel Temperature
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current DC
Continuous Drain Current Peak)
Continuous Source Current DC
Total Power Dissipation
Repetitive Avalanche Current
Single Avalanche Energy
Repetitive Avalanche Energy
Drain-Source Diode di/dt Strength
Tstg
Tch
VDSS
VGSS
ID
IDP
IS
PT
IAR
EAS
EAR
di/dt
Pulse width 10μs, duty = 1/100
Starting Tch=25 Tch 150
Starting Tch=25 Tch 150
Starting Tch=25 Tch 150
Is=10A,Tc=25
Electrical Characteristics
Item Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
IGSS
Forward Transconductance
gfs
RStatic Drain-Source On-state Resistance (DS)ON
Gate Threshold Voltage
VTH
Source-Drain Diode Forward Voltage
VSD
Thermal Resistance
θjc
Total Gate Charge
Qg
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-on delay time
td (on)
Rise time
tr
Turn-off delay time
td (off)
Fall time
tf
ID = 1mA, VGS = 0V
VDS = 280V, VGS = 0V
VGS = ±25V, VDS = 0V
ID = 5A, VDS = 10V
ID = 5A, VGS = 10V
ID = 1mA, VDS = 10V
IS = 5A, VGS = 0V
Junction to case
VDD = 200V, VGS = 10V
ID = 10A
VDS = 50V, VGS = 0V, f = 1MH
ID = 5A, RL = 30Ω
VDD = 150V, Rg=50Ω
VGS(+) = 10V, VGS(−) = 0V
Ratings
Unit
Ratings
Unit
www.shindengen.co.jp/product/semi/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P10B28HP2.PDF ] | |
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