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MT9HTF6472AY PDF даташит

Спецификация MT9HTF6472AY изготовлена ​​​​«Micron» и имеет функцию, называемую «512MB DDR2 SDRAM UDIMM».

Детали детали

Номер произв MT9HTF6472AY
Описание 512MB DDR2 SDRAM UDIMM
Производители Micron
логотип Micron логотип 

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MT9HTF6472AY Даташит, Описание, Даташиты
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
Features
DDR2 SDRAM UDIMM
MT9HTF3272AY – 256MB
MT9HTF6472AY – 512MB
MT9HTF12872AY – 1GB
Features
240-pin, unbuffered dual in-line memory module
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
256MB (32 Meg x 72), 512MB (64 Meg x 72), or 1GB
(128 Meg x 72)
VDD = VDDQ 1.8V
VDDSPD = 1.7–3.6V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Single rank
Multiple internal device banks for concurrent
operation
Programmable CAS latency (CL)
Posted CAS# additive latency (AL)
WRITE latency = READ latency - 1 tCK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Serial presence detect (SPD) with EEPROM
Gold edge contacts
Figure 1: 240-Pin UDIMM (MO-237 R/C A/F)
Module height 30.0mm (1.18in)
Options
Operating temperature
Commercial (0°C TA +70°C)
Industrial (–40°C TA +85°C)1
Package
240-pin DIMM (lead-free)
Frequency/CL2
2.5ns @ CL = 5 (DDR2-800)3, 4
2.5ns @ CL = 6(DDR2-800)3, 4
3.0ns @ CL = 6 (DDR2-667)
3.75ns @ CL = 5 (DDR2-53E)
5.0ns @ CL = 5 (DDR2-40E)
Marking
None
I
Y
-80E
-800
-667
-53E
-40E
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Contact Micron for product availability.
4. Not available in 256MB density.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
800
Data Rate (MT/s)
CL = 5
CL = 4
800 533
667 533
667 553
553
400
CL = 3
400
400
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
12.5
15
15
15
15
tRC
(ns)
55
55
55
55
55
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.









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MT9HTF6472AY Даташит, Описание, Даташиты
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
Features
Table 2: Addressing
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
256MB
8K
8K A[12:0]
4 BA[1:0]
256Mb (32 Meg x 8)
1K A[9:0]
1 S0#
512MB
8K
16K A[13:0]
4 BA[1:0]
512Mb (64 Meg x 8)
1K A[9:0]
1 S0#
1GB
8K
16K A[13:0]
8 BA[2:0]
1Gb (128 Meg x 8)
1K A[9:0]
1 S0#
Table 3: Part Numbers and Timing Parameters – 256MB
Base device: MT47H32M8,1 256Mb DDR2 SDRAM
Part Number2
Module
Density
Configuration
MT9HTF3272A(I)Y-667__
256MB
32 Meg x 72
MT9HTF3272A(I)Y-53E__
256MB
32 Meg x 72
MT9HTF3272A(I)Y-40E__
256MB
32 Meg x 72
Module
Bandwidth
5.3 GB/s
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
Clock Cycles
(CL-tRCD-tRP)
5-5-5
4-4-4
3-3-3
Table 4: Part Numbers and Timing Parameters – 512MB
Base device: MT47H64M8,1 512Mb DDR2 SDRAM
Part Number2
Module
Density
Configuration
MT9HTF6472A(I)Y-80E__
512MB
64 Meg x 72
MT9HTF6472A(I)Y-800__
512MB
64 Meg x 72
MT9HTF6472A(I)Y-667__
512MB
64 Meg x 72
MT9HTF6472A(I)Y-53E__
512MB
64 Meg x 72
MT9HTF6472A(I)Y-40E__
512MB
64 Meg x 72
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
Clock Cycles
(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.









No Preview Available !

MT9HTF6472AY Даташит, Описание, Даташиты
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
Features
Table 5: Part Numbers and Timing Parameters – 1GB
Base device: MT47H128M8,1 1Gb DDR2 SDRAM
Part Number2
Module
Density
Configuration
MT9HTF12872A(I)Y-80E__
1GB 128 Meg x 72
MT9HTF12872A(I)Y-800__
1GB 128 Meg x 72
MT9HTF12872A(I)Y-667__
1GB 128 Meg x 72
MT9HTF12872A(I)Y-53E__
1GB 128 Meg x 72
MT9HTF12872A(I)Y-40E__
1GB 128 Meg x 72
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
Clock Cycles
(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
Notes: 1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT9HTF6472AY-667C2.
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
3 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.










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MT9HTF6472AY512MB DDR2 SDRAM UDIMMMicron
Micron

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