|
|
Datasheet MT8HTF6464AY Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MT8HTF6464AY | 512MB DDR2 SDRAM UDIMM 256MB, 512MB, 1GB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Features
DDR2 SDRAM UDIMM
MT8HTF3264AY – 256MB MT8HTF6464AY – 512MB MT8HTF12864AY – 1GB
Features
• 240-pin, unbuffered dual in-line memory module • Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, PC2-6400, or PC2-8500
• 256MB |  Micron | data |
MT8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MT800 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | MT800 | Thyristor Modules MTC800 MTA800 MTK800 MTX800 MT800
Thyristor Modules
Features：
Isolated mounting base 2500V~ Pressure contact technology with
Incrtased power cycling capability Space and weight savings
Typical Applications：
AC/DC Motor drives Various rectifiers DC supply for PWM inverter  TECHSEM thyristor | | |
| 3 | MT8102 | 450KHz Step-Down Converter MT8102
2A, 30V, 450KHz Step-Down Converter
DESCRIPTION
The MT8102 is a monolithic step-down buck converter with a built-in internal switching power MOSFET. It generates 2A output current with fixed 450KHz switching frequency and a wide input supply range. Output voltage can be adjusted down to 0.8V  Maxic Technology converter | | |
| 4 | MT8103 | P-Channel Enhancement Mode Field Effect Transistor MOS-TECH Semiconductor Co.,LTD 茂鈿半導體股份有限公司
MT8103
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
VDS= -30V ID= -13A (VGS= -10V)
≦ ΩRDS(ON) 10m @VGS= -10V ≦ ΩRDS(ON) 15.5m @VGS= -4.5V
Applications：
▪ Notebook Computer ▪ Portable Battery Pack
F  MOS-TECH transistor | | |
| 5 | MT820-xx | STANDARD T-1 3/4 LED LAMPS w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
 Marktech Corporate led | | |
| 6 | MT8205 | N-Channel Power MOSFET, Transistor 茂钿半導體股份有限公司
Mos-Tech Semiconductor Co.,LTD.
MT8205
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TSOP6 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ MOS-TECH mosfet | | |
| 7 | MT8205A | N-Channel Power MOSFET, Transistor 茂钿半導體股份有限公司
Mos-Tech Semiconductor Co.,LTD.
MT8205A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TSSOP-8 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) MOS-TECH mosfet | |
| Esta página es del resultado de búsqueda del MT8HTF6464AY. Si pulsa el resultado de búsqueda de MT8HTF6464AY se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |