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MT18HTF25672P PDF даташит

Спецификация MT18HTF25672P изготовлена ​​​​«Micron» и имеет функцию, называемую «2GB DDR2 SDRAM Registered DIMM».

Детали детали

Номер произв MT18HTF25672P
Описание 2GB DDR2 SDRAM Registered DIMM
Производители Micron
логотип Micron логотип 

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MT18HTF25672P Даташит, Описание, Даташиты
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Features
DDR2 SDRAM Registered DIMM (RDIMM)
MT18HTF6472 – 512MB
MT18HTF12872(P) – 1GB
MT18HTF25672(P) – 2GB
For component data sheets, refer to Micron's Web site: www.micron.com
Features
• 240-pin, registered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200, PC2-
5300, or PC2-6400
• Supports ECC error detection and correction
• VDD = VDDQ = +1.8V
• VDDSPD = +1.7V to +3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Single rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
Figure 1:
240-Pin RDIMM (MO-237
R/C C–Non-Parity, R/C H–Parity)
PCB height: 30mm (1.18in)
Options
• Parity3
• Operating temperature1
Commercial (0°C TA +70°C)
Industrial (–40°C TA +85°C)
• Package
240-pin DIMM (Pb-free)
• Frequency/CAS latency2
2.5ns @CL = 5 (DDR2-800)3
2.5ns @ CL = 6 (DDR2-800)3
3.0ns @ CL = 5 (DDR2-667)3
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)
• PCB height
30mm (1.18in)
Marking
P
None
I
Y
-80E
-800
-667
-53E
-40E
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
3. Not available in 512MB density.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
Data Rate (MT/s)
CL = 5
800
667
667
CL = 4
533
533
533
533
400
CL = 3
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
tRC
(ns)
12.5 55
15 55
15 55
15 55
15 55
PDF: 09005aef80e5e752/Source: 09005aef80e5e626
HTF18C64_128_256x72.fm - Rev. E 3/07 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.









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MT18HTF25672P Даташит, Описание, Даташиты
Table 2: Addressing
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Features
512MB
8K
8K (A0–A12)
4 (BA0, BA1)
1KB
256Mb (64 Meg x 4)
2K (A0–A9, A11)
1 (S0#)
1GB
8K
16K (A0–A13)
4 (BA0, BA1)
1KB
512Mb (128 Meg x 4)
2K (A0–A9, A11)
1 (S0#)
2GB
8K
16K (A0–A13)
8 (BA0, BA1, BA2)
1KB
1Gb (256 Meg x 4)
2K (A0–A9, A11)
1 (S0#)
Table 3:
Part Numbers and Timing Parameters – 512MB Modules
Base device: MT47H64M4,1 256Mb DDR2 SDRAM
Part Number2
MT18HTF6472Y-53E__
MT18HTF6472Y-40E__
Module
Density
512MB
512MB
Configuration
64 Meg x 72
64 Meg x 72
Module
Bandwidth
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
3.75ns/533 MT/s
5.0ns/400 MT/s
Latency
(CL-tRCD-tRP)
4-4-4
3-3-3
Table 4:
Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H128M4,1 512Mb DDR2 SDRAM
Part Number2
MT18HTF12872(P)Y-80E__
MT18HTF12872(P)Y-800__
MT18HTF12872(P)Y-667__
MT18HTF12872(P)Y-53E__
MT18HTF12872(P)Y-40E__
Module
Density
1GB
1GB
1GB
1GB
1GB
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
Latency
(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
Table 5:
Part Numbers and Timing Paramters – 2GB Modules
Base device: MT47H256M4,1 1Gb DDR2 SDRAM
Part Number2
MT18HTF25672(P)Y-80E__
MT18HTF25672(P)Y-800__
MT18HTF25672(P)Y-667__
MT18HTF25672(P)Y-53E__
MT18HTF25672(P)Y-40E__
Module
Density
2GB
2GB
2GB
2GB
2GB
Configuration
256 Meg x 72
256 Meg x 72
256 Meg x 72
256 Meg x 72
256 Meg x 72
Module
Bandwith
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
Latency
(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT18HTF6472Y-667D2.
PDF: 09005aef80e5e752/Source: 09005aef80e5e626
HTF18C64_128_256x72.fm - Rev. E 3/07 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.









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MT18HTF25672P Даташит, Описание, Даташиты
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Pin Assignments and Descriptions
Pin Assignments and Descriptions
Table 6: Pin Assignments
240-Pin RDIMM Front
240-Pin RDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol
Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1 VREF 31 DQ19 61 A4 91 VSS
2 VSS 32 VSS 62 VDDQ 92 DQS5#
3 DQ0 33 DQ24 63 A2 93 DQS5
4 DQ1 34 DQ25 64 VDD 94 VSS
5 VSS 35 VSS 65 VSS 95 DQ42
6 DQS0# 36 DQS3# 66 VSS 96 DQ43
7 DQS0 37 DQS3 67 VDD 97 VSS
8 VSS 38 VSS 683 NC/ 98 DQ48
PAR_IN
9 DQ2 39 DQ26 69 VDD 99 DQ49
10 DQ3 40 DQ27 70 A10 100 VSS
11 VSS 41 VSS 71 BA0 101 SA2
12 DQ8 42 CB0 72 VDDQ 102 NC
13 DQ9 43 CB1 73 WE# 103 VSS
14 VSS 44 VSS 74 CAS# 104 DQS6#
15 DQS1# 45 DQS8# 75 VDDQ 105 DQS6
16 DQS1 46 DQS8 76 S1# 106 VSS
17 VSS 47 VSS 77 ODT1 107 DQ50
18 RESET# 48 CB2 78 VDDQ 108 DQ51
19 NC 49 CB3 79 VSS 109 VSS
20 Vss 50 VSS 80 DQ32 110 DQ56
21 DQ10 51 VDDQ 81 DQ33 111 DQ57
22 DQ11 52 CKE0 82 VSS 112 VSS
23 VSS 53 VDD 83 DQS4# 113 DQS7#
24 DQ16 541 NC/BA2 84 DQS4 114 DQS7
25 DQ17 552 NC/ 85 VSS 115 VSS
ERR_OUT
26 VSS 56 VDDQ 86 DQ34 116 DQ58
27 DQS2# 57 A11 87 DQ35 117 DQ59
28 DQS2 58 A7 88 VSS 118 VSS
29 VSS 59 VDD 89 DQ40 119 SDA
30 DQ18 60 A5 90 DQ41 120 SCL
121 VSS 151 VSS 181
122 DQ4 152 DQ28 182
123 DQ5 153 DQ29 183
124 VSS 154 VSS 184
125 DQS9 155 DQS12 185
126 DQS9# 156 DQS12# 186
127 VSS 157 VSS 187
128 DQ6 158 DQ30 188
VDDQ
A3
A1
VDD
CK0
CK0#
VDD
A0
211 DQS14
212 DQS14#
213 VSS
214 DQ46
215 DQ47
216 VSS
217 DQ52
218 DQ53
129 DQ7 159 DQ31 189 VDD 219 VSS
130 VSS 160 VSS 190 BA1 220 RFU
131 DQ12 161 CB4 191 VDDQ 221 RFU
132 DQ13 162 CB5 192 RAS# 222 VSS
133 VSS 163 VSS 193 S0# 223 DQS15
134 DQS10 164 DQS17 194 VDDQ 224 DQS15#
135 DQS10# 165 DQS17# 195 ODT0 225 VSS
136 VSS 166 VSS 1964 NC/A13 226 DQ54
137 RFU 167 CB6 197 VDD 227 DQ55
138 RFU 168 CB7 198 VSS 228 VSS
139 VSS 169 VSS 199 DQ36 229 DQ60
140 DQ14 170 VDDQ 200 DQ37 230 DQ61
141 DQ15 171 CKE1 201 VSS 231 VSS
142 VSS 172 VDD 202 DQS13 232 DQS16
143 DQ20 173 NC 203 DQS13# 233 DQS16#
144 DQ21 174 NC 204 VSS 234 VSS
145 VSS 175 VDDQ 205 DQ38 235 DQ62
146 DQS11 176 A12 206 DQ39 236 DQ63
147 DQS11# 177 A9 207 VSS 237 VSS
148 VSS 178 VDD 208 DQ44 238 VDDSPD
149 DQ22 179 A8 209 DQ45 239 SA0
150 DQ23 180 A6 210 VSS 240 SA1
Notes:
1. Pin 54 is NC for 512MB and 1GB or BA2 for 2GB.
2. Pin 55 is NC for non-parity and ERR_OUT for parity.
3. Pin 68 is NC for non-parity and PAR_IN for parity.
4. Pin 196 is NC for 512MB or A13 for 1GB and 2GB.
PDF: 09005aef80e5e752/Source: 09005aef80e5e626
HTF18C64_128_256x72.fm - Rev. E 3/07 EN
3 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.










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