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MMBT3904TT1 PDF даташит

Спецификация MMBT3904TT1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «General Purpose Transistors».

Детали детали

Номер произв MMBT3904TT1
Описание General Purpose Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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MMBT3904TT1 Даташит, Описание, Даташиты
MMBT3904TT1
General Purpose Transistors
NPN Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT-416/SC-75 package which is
designed for low power surface mount applications.
Features
ăPb-Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Value
Unit
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
PD
FR-4 Board (Note 1) @TA = 25°C
200 mW
Derated above 25°C
1.6 mW/°C
Thermal Resistance, Junction- to- Ambient
(Note 1)
RqJA
600 °C/W
Total Device Dissipation,
PD
FR-4 Board (Note 2) @TA = 25°C
300 mW
Derated above 25°C
2.4 mW/°C
Thermal Resistance, Junction- to- Ambient
(Note 2)
RqJA
400 °C/W
Junction and Storage Temperature Range TJ, Tstg - 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ Minimum Pad
2. FR-4 @ 1.0 × 1.0 Inch Pad
©Ă Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 4
1
http://onsemi.com
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
SOT-416/SC-75
CASE 463
STYLE 1
MARKING DIAGRAM
AM MĂG
G
1
AM = Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MMBT3904TT1
Package
SOT-416
Shipping
3000 Tape & Reel
MMBT3904TT1G SOT-416 3000 Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBT3904TT1/D









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MMBT3904TT1 Даташит, Описание, Даташиты
MMBT3904TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collectorā-āEmitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
Collectorā-āBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitterā-āBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collectorā-āEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Baseā-āEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL-āSIGNAL CHARACTERISTICS
Currentā-āGain - Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Smallā-āSignal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = -ā0.5 Vdc)
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
Fall Time
(IB1 = IB2 = 1.0 mAdc)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBT3904TT1
MMBT3904TT1
MMBT3904TT1
MMBT3904TT1
Symbol
Min Max
Unit
V(BR)CEO
40
-
Vdc
V(BR)CBO
60
-
Vdc
V(BR)EBO
6.0
-
Vdc
IBL nAdc
- 50
ICEX
nAdc
- 50
hFE
VCE(sat)
VBE(sat)
40 -
70 -
100 300
60 -
30 -
- 0.2
- 0.3
0.65 0.85
- 0.95
-
Vdc
Vdc
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
300 -
MHz
pF
- 4.0
pF
- 8.0
1.0 10
kW
X 10- ā 4
0.5 8.0
100 400
-
mmhos
1.0 40
dB
- 5.0
td - 35
ns
tr - 35
ts - 200
ns
tf - 50
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MMBT3904TT1 Даташит, Описание, Даташиты
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
0.001
0.00001
0.0001
MMBT3904TT1
0.001
0.01 0.1
t, TIME (s)
1.0
Figure 1. Normalized Thermal Response
10
100 1000
DUTY CYCLE = 2%
300 ns
-ā0.5 V
+10.9 V
10 k
< 1 ns
+3 V
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
CS < 4 pF*
0
-ā9.1 V
+10.9 V
10 k
1N916
< 1 ns
+3 V
275
CS < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 2. Delay and Rise Time
Equivalent Test Circuit
Figure 3. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
5.0
Cibo
3.0
2.0 Cobo
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Capacitance
20 30 40
TJ = 25°C
TJ = 125°C
5000
3000 VCC = 40 V
2000 IC/IB = 10
1000
700
500
300
200
100
70
50
1.0
QT
QA
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Charge Data
200
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