NRVB0540T1G PDF даташит
Спецификация NRVB0540T1G изготовлена «ON Semiconductor» и имеет функцию, называемую «Surface Mount Schottky Power Rectifier». |
|
Детали детали
Номер произв | NRVB0540T1G |
Описание | Surface Mount Schottky Power Rectifier |
Производители | ON Semiconductor |
логотип |
5 Pages
No Preview Available ! |
MBR0540T1G,
NRVB0540T1G,
MBR0540T3G,
NRVB0540T3G
Surface Mount
Schottky Power Rectifier
SOD−123 Power Surface Mount Package
The Schottky Power Rectifier employs the Schottky Barrier
principle with a barrier metal that produces optimal forward voltage
drop−reverse current tradeoff. Ideally suited for low voltage, high
frequency rectification, or as a free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package provides an alternative to the
leadless 34 MELF style package.
Features
Guardring for Stress Protection
Very Low Forward Voltage
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics
Device Marking: B4
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C max. for 10 Seconds
ESD Rating:
Human Body Model = 3B
Machine Model = C
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES, 40 VOLTS
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
1
B4MG
G
B4 = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package
Shipping†
MBR0540T1G SOD−123 3,000/Tape & Reel
(Pb−Free) (8 mm Tape, 7” Real)
NRVB0540T1G SOD−123 3,000/Tape & Reel
(Pb−Free) (8 mm Tape, 7” Real)
MBR0540T3G SOD−123 10,000/Tape & Reel
(Pb−Free) (8 mm Tape, 13” Real)
NRVB0540T3G SOD−123 10,000/Tape & Reel
(Pb−Free) (8 mm Tape, 13” Real)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7
1
Publication Order Number:
MBR0540T1/D
No Preview Available ! |
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 115C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 115C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
40
0.5
1.0
5.5
V
A
A
A
Storage/Operating Case Temperature Range
Tstg, TC
−55 to +150
C
Operating Junction Temperature
TJ −55 to +150 C
Voltage Rate of Change
(Rated VR, TJ = 25C)
dv/dt
1000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board.
Symbol
Rtjl
Rtja
Value
118
206
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 0.5 A)
(iF = 1 A)
Maximum Instantaneous Reverse Current (Note 3)
(VR = 40 V)
(VR = 20 V)
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%.
Symbol
vF
IR
Value
TJ = 25C
0.51
0.62
TJ = 100C
0.46
0.61
TJ = 25C
20
10
TJ = 100C
13,000
5,000
Unit
V
mA
100
10 10
25C
1.0
TJ = 125C
TJ = -40C
0.1
0.2
TJ = 25C
TJ = 100C
0.4 0.6 0.8 1.0
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.2
1.0
TJ = 125C
TJ = 100C
TJ = 25C
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
http://onsemi.com
2
No Preview Available ! |
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
100E-3
100E-3
10E-3
1.0E-3
100E-6
10E-6
1.0E-6
100E-9
0
TJ = 125C
TJ = 100C
TJ = 25C
10 20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
10E-3
1.0E-3
100E-6
10E-6
1.0E-6
100E-9
40 0
TJ = 100C
TJ = 25C
10 20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
40
0.8
dc
0.7
0.6 SQUARE WAVE
0.5
Ipk/Io = p
0.4
Ipk/Io = 5
0.3
Ipk/Io = 10
0.2 Ipk/Io = 20
0.1
FREQ = 20 kHz
0.45
0.40
SQUARE WAVE
0.35
Ipk/Io = p
0.30
0.25 Ipk/Io = 5
0.20 Ipk/Io = 10
0.15 Ipk/Io = 20
0.10
0.05
dc
0
0 20 40 60 80 100 120 140
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
TL, LEAD TEMPERATURE (C)
Figure 5. Current Derating
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
100 126
TJ = 25C
124
122
Rtja = 118C/W
120
10
0 5.0 10 15 20 25 30 35 40
118
149C/W
116
180C/W
114
206C/W
112
228C/W
110
0 5.0 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any
reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as
TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed.
http://onsemi.com
3
Скачать PDF:
[ NRVB0540T1G.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NRVB0540T1G | Surface Mount Schottky Power Rectifier | ON Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |