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MT36VDDF12872 PDF даташит

Спецификация MT36VDDF12872 изготовлена ​​​​«Micron» и имеет функцию, называемую «1GB DDR SDRAM RDIMM».

Детали детали

Номер произв MT36VDDF12872
Описание 1GB DDR SDRAM RDIMM
Производители Micron
логотип Micron логотип 

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MT36VDDF12872 Даташит, Описание, Даташиты
1GB, 2GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM
Features
DDR SDRAM RDIMM
MT36VDDF12872 – 1GB
MT36VDDF25672 – 2GB
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 184-pin, registered dual in-line memory module
(RDIMM)
• Tall- and standard-height PCB options
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 1GB (128 Meg x 72) and 2GB (256 Meg x 72)
• Supports ECC error detection and correction
• VDD = VDDQ = +2.5V
(-40B VDD = VDDQ = +2.6V)
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
2n-prefetch architecture
• Bidirectional data strobe (DQS) transmitted/
received with data—that is, source-synchronous
data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
• Dual rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
• Gold edge contacts
184-Pin RDIMM Figures
Figure 1: Tall-Height Layout – 1GB, 2GB
(MO-206-EA)
PCB height: 43.18mm (1.7in)
Figure 2: Standard-Height Layout – 1GB
(MO-206-CA R/C D)
PCB height: 30.48mm (1.2in)
Figure 3: Standard-Height Layout – 2GB
(MO-206-CA R/C D)
PCB height: 30.48mm (1.2in)
Options
• Operating temperature1
Commercial (0°C TA +70°C)
Industrial (–40°C TA +85°C)
• Package
184-pin DIMM (standard)
184-pin DIMM (Pb-free)
• Memory clock, speed, CAS latency2
5.0ns (200 MHz), 400 MT/s, CL = 3
6.0ns (166 MHz), 333 MT/s, CL = 2.5
7.5ns (133 MHz), 266 MT/s, CL = 2
7.5ns (133 MHz), 266 MT/s, CL = 2
7.5ns (133 MHz), 266 MT/s, CL = 2.5
Marking
None
I
G
Y
-40B
-335
-262
-26A
-265
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
adds one clock cycle to CL.
PDF: 09005aef80772fd2/Source: 09005aef8075ebf6
DDF36C128_256x72.fm - Rev. G 9/08 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.









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MT36VDDF12872 Даташит, Описание, Даташиты
1GB, 2GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM
Features
Table 1: Key Timing Parameters
Speed
Grade
-40B
-335
-262
-26A
-265
Industry
Nomenclature
Data Rate (MT/s)
CL = 3 CL = 2.5 CL = 2
tRCD
(ns)
tRP
(ns)
tRC
(ns) Notes
PC3200
PC2700
PC2100
PC2100
PC2100
400 333 266
15
15
55
333 266
18
18
60 1
266 266
15
15
60
266 266
20
20
65
266 200
20
20
65
Notes: 1. The values of tRCD and tRP for -335 modules show 18ns to align with industry specifications;
actual DDR SDRAM device specifications are 15ns.
Table 2: Addressing
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
1GB
8K
8K (A0–A12)
4 (BA0, BA1)
256Mb (64 Meg x 4)
2K (A0–A9, A11)
2 (S0#, S1#)
2GB
8K
8K (A0–A12)
4 (BA0, BA1)
512Mb (128 Meg x 4)
4K (A0–A9, A11, A12)
2 (S0#, S1#)
Table 3:
Part Numbers and Timing Parameters – 1GB Modules
Base device: MT46V64M4,1 256Mb DDR SDRAM
Part Number2
MT36VDDF12872G-40B__
MT36VDDF12872Y-40B__
MT36VDDF12872G-335__
MT36VDDF12872Y-335__
MT36VDDF12872G-262__
MT36VDDF12872G-26A__
MT36VDDF12872Y-26A__
MT36VDDF12872G-265__
MT36VDDF12872Y-265__
Module
Density
1GB
1GB
1GB
1GB
1GB
1GB
1GB
1GB
1GB
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
Module
Bandwidth
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
Memory Clock/
Data Rate
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Clock Cycles
(CL-tRCD-tRP)
3-3-3
3-3-3
3-3-3
3-3-3
2-2-2
2-3-3
2-3-3
2.5-3-3
2.5-3-3
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes.
Example: MT36VDDF12872Y-335G3.
PDF: 09005aef80772fd2/Source: 09005aef8075ebf6
DDF36C128_256x72.fm - Rev. G 9/08 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.









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MT36VDDF12872 Даташит, Описание, Даташиты
1GB, 2GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM
Features
Table 4:
Part Numbers and Timing Parameters – 2GB Modules
Base device: MT46V128M4,1 512Mb DDR SDRAM
Part Number2
Module
Density
Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-tRCD-tRP)
MT36VDDF25672G-40B__
MT36VDDF25672Y-40B__
MT36VDDF25672G-335__
MT36VDDF25672Y-335__
MT36VDDF25672G-262__
MT36VDDF25672G-26A__
MT36VDDF25672G-265__
MT36VDDF25672Y-265__
2GB
256 Meg x 72
3.2 GB/s
5.0ns/400 MT/s
2GB
256 Meg x 72
3.2 GB/s
5.0ns/400 MT/s
2GB
256 Meg x 72
2.7 GB/s
6.0ns/333 MT/s
2GB
256 Meg x 72
2.7 GB/s
6.0ns/333 MT/s
2GB
256 Meg x 72
2.1 GB/s
7.5ns/266 MT/s
2GB
256 Meg x 72
2.1 GB/s
7.5ns/266 MT/s
2GB
256 Meg x 72
2.1 GB/s
7.5ns/266 MT/s
2GB
256 Meg x 72
2.1 GB/s
7.5ns/266 MT/s
3-3-3
3-3-3
3-3-3
3-3-3
2-2-2
2-3-3
2.5-3-3
2.5-3-3
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes.
Example: MT36VDDF12872Y-335G3.
PDF: 09005aef80772fd2/Source: 09005aef8075ebf6
DDF36C128_256x72.fm - Rev. G 9/08 EN
3 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.










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