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WCM2064 PDF даташит

Спецификация WCM2064 изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв WCM2064
Описание MOSFET ( Transistor )
Производители WillSEMI
логотип WillSEMI логотип 

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WCM2064 Даташит, Описание, Даташиты
WCM2064
N- and P-Channel Complementary, 20V,MOSFET
VDS (V)
N-Channel
20
P-Channel
-20
Typical RDS(on) (Ω)
0.034@ VGS=4.5V
0.041@ VGS=2.5V
0.050@ VGS=1.8V
0.083@VGS=- 4.5V
0.110@VGS= -2.5V
0.145@VGS= -1.8V
Descriptions
The WCM2064 is the N-Channel and
P-Channel enhancement MOS Field Effect
Transistor as a single package for DC-DC converter
or level shift applications, uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. Standard Product WCM2064
is Pb-free a nd Halogen-free.
WCM2064
Http//:www.sh-willsemi.com
SOT-23-6L
Pin configuration (Top View)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-6L
Applications
Driver: Relays, Solenoids, Lamps, Hammers
Power supply converters circuit
Load/Power Switching for portable device
2064 = Device Code
YYWW= Date Code
Marking
Order Information
Device
Package
Shipping
WCM2064-6/TR SOT-23-6L 3000/Tape&Reel
Will Semiconductor Ltd.
1 May, 2014 -Rev.1.1









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WCM2064 Даташит, Описание, Даташиты
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
WCM2064
Symbol
VDSS
VGSS
ID
IDM
PD
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current a d
Pulsed Drain Current c
Power Dissipation a d
TJ Operation junction temperature
Tstg Storage temperature range
TA=25oC
TA=70oC
TA=25oC
TA=70oC
N-Channel P-Channel
20 -20
±8 ±8
4.4 -2.8
3.5 -2.2
16 -10
0.72
0.46
-55~150
-55~150
Unit
V
V
A
A
W
°C
°C
Thermal Resistance Ratings (TA=25oC unless otherwise noted)
Parameter
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
Symbol
RθJA
RθJA
Junction-to-Case Thermal Resistance Steady State RθJC
Typical
74
115
90
138
63
Maximum
92
143
112
172
78
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Pulse width<380μs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd.
2 May, 2014 -Rev.1.1









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WCM2064 Даташит, Описание, Даташиты
WCM2064
Electronics Characteristics (TA=25oC unless otherwise noted)
Symbol Parameter
Test Condition
Min Typ. Max Unit
Off Characteristics
V(BR)DSS
IDSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
VGS=0V, ID=250uA
VGS=0V, ID=-250uA
VDS=16V, VGS=0V
VDS=-16V, VGS=0V
IGSS Gate Source leakage current VDS=0V, VGS=±8V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
V
1
uA
-1
±1
±1 uA
ON Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
Dynamic Characteristics
VDS= VGS, ID=250uA
VDS= VGS, ID=-250uA
VGS=4.5V, ID=3.4A
VGS=-4.5V, ID=-2.8A
VGS=2.5V, ID=3.0A
VGS=-2.5V, ID=-2.0A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.65
-0.70
1.0
-1.0
V
34 46
83 116
41 69 m
110 160
Ciss
Coss
Crss
QG(TOT)
QG(TH)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold gate charge
Nmos
VDS=10V,VGS=0V,
F=1MHz
Pmos
VDS=-10V,VGS=0V,
f=1MHZ
Nmos
VDD=10V, VGS=4.5V,
ID=2.8A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
529
531
62
61
57
54
7.35
5.8
0.75
0.82
pF
nC
QGS Gate-Source Charge
QGD Gate-Drain Charge
Pmos
VDD=-10V,VGS=-4.5V
ID=-2.8A
N-Ch
P-Ch
N-Ch
P-Ch
1.1
1.2
1.35
0.8
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Nmos
VDD=10V,VGS=4.5V,
ID=1.0A, RG=6
Pmos
VDD=-10V, ID=-1.2A,
VGS=-4.5V, RG=6
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
18.6
21.6
8.2
8.6
55
58
7.6
8.4
ns
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD
VGS = 0 V, IS = 1.0A
VGS = 0 V, IS =-1.0A
N-Ch
P-Ch
0.7 1.5
V
-0.8 -1.5
Will Semiconductor Ltd.
3 May, 2014 -Rev.1.1










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