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Datasheet WPM9435A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WPM9435A | MOSFET, Transistor WPM9435A
Single P-Channel, -30V, -6.3A, Power MOSFET
WPM9435A
Http://www.sh-willsemi.com
VDS (V) -30
Typical RDS(on) (mΩ)
33 @ VGS=-10V 43 @ VGS=-4.5V
Descriptions
The WPM9435A is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent |  WillSEMI | mosfet |
WPM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WPM1480 | P-Channel MOSFET WPM1480
WPM1480
Single P-Channel, -20 V, -1.5 A,Power Mosfet
Description
The WPM1480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPM1480 is Pb-free.
Features
9 %5 '  Will Semiconductor mosfet | | |
| 2 | WPM1481 | Single P-Channel Power MOSFET WPM1481
Single P-Channel, -12V, -5.5A, Power MOSFET
VDS (V) -12
Typical Rds(on) (Ω) 0.022@ VGS=-4.5V 0.030@ VGS=-2.5V 0.045@ VGS=-1.8V
ID (A) -5.5 -4.0 -2.5
Descriptions
The WPM1481 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide exce WillSEMI mosfet | | |
| 3 | WPM1483 | P-Channel MOSFET WPM1483
Single P-Channel, -12V, -3.5A, Power MOSFET
VDS (V) -12
Typical Rds(on) (Ω) 0.031@ VGS=–4.5V 0.040@ VGS=–2.5V 0.056@ VGS=–1.8V
Descriptions
The WPM1483 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) wi Will Semiconductor mosfet | | |
| 4 | WPM1485 | P-Channel MOSFET WPM1485
Single P-Channel, -12V, -7.4A, Power MOSFET
VDS (V) -12
Rds(on) (Ω) 0.015@ VGS=–4.5V 0.020@ VGS=–2.5V 0.030@ VGS=–1.8V
Descriptions
The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low Will Semiconductor mosfet | | |
| 5 | WPM1488 | P-Channel MOSFET WPM1488
Single P-Channel, -12V, -1.4A, Power MOSFET
VDS (V) -12
Typical Rds(on) (Ω) 0.080@ VGS=–4.5V 0.086@ VGS=–3.6V 0.105@ VGS=–2.5V
ID (A) -1.2 -1.0 -1.0
Descriptions
The WPM1488 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide Will Semiconductor mosfet | | |
| 6 | WPM2005 | Power MOSFET and Schottky Diode WPM2005
WPM2005 Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF Schottky
Applications
z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushl WillSEMI mosfet | | |
| 7 | WPM2005B | Power MOSFET and Schottky Diode WPM2005B
Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF Schottky
Applications
z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Mo WillSEMI mosfet | |
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