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PDF WPM6205 Data sheet ( Hoja de datos )
| Número de pieza | WPM6205 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPM6205 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPM6205
Single P-Channel, -20V, -4.8A, Power MOSFET
WPM6205
Http://www.sh-willsemi.com
VDS (V)
-20
Typical RDS(on) (mΩ)
33@ VGS=-4.5V
44@ VGS=-2.5V
65@ VGS=-1.8V
Descriptions
The WPM6205 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM6205 is Pb-free.
Features
SOT-23-3L
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-3L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PA = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM6205-3/TR
Package
Shipping
SOT-23-3L 3000/Tape&Reel
Will Semiconductor Ltd. 1 Aug.2016- Rev.1.1
1 page  
2000
F = 1MHZ
Ciss
1500
1000
500
0
0
Coss
Crss
3 6 9 12
-VDS-Drain to Source Voltage (V)
Capacitance
15
100
TJ(MAX)=150oC
80
T =25oC
A
60
40
20
0
1E-4
1E-3
0.01
0.1
1
10
Pulse width (S)
100
Single pulse power
4.5
VDS=-10V
ID=-5A
3.0
WPM6205
10
8
6
T=150oC
4
2
T=25oC
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD-Source to Drain Voltage (V)
Body diode forward voltage
100
Limit by Rdson
10
1ms
1
10s
0.1 DC
10ms
100ms
1s
T =25oC
A
Single Pulse
0.01
0.1
1 10
-VDS-Drain to Source Voltage(V)
*VGS>minimum VGS at which RDS(ON) is specified
100
Safe operating power
1.5
0.0
0 3 6 9 12 15
Qg(nC)
Gate Charge Characteristics
Will Semiconductor Ltd. 5 Aug.2016- Rev.1.1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM6205.PDF ] | |
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