WPM3022 PDF даташит
Спецификация WPM3022 изготовлена «WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )». |
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Детали детали
Номер произв | WPM3022 |
Описание | MOSFET ( Transistor ) |
Производители | WillSEMI |
логотип |
7 Pages
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WPM3022
Single P-Channel, -30V, -3.1A, Power MOSFET
WPM3022
Http://www.sh-willsemi.com
VDS (V)
-30
Typical RDS(on) (mΩ)
56 @ VGS=-10V
77 @ VGS=-4.5V
Descriptions
The WPM3022 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3022 is Pb-free.
Features
D
S
G
SOT-23
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PD = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM3022-3/TR
Package
SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 2016/08/26- Rev.1.0
No Preview Available ! |
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WPM3022
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 s Steady State
-30
±20
-3.1 -2.9
-2.5 -2.3
0.96 0.80
0.62 0.52
-2.8 -2.6
-2.2 -2.0
0.78 0.66
0.50 0.42
-15
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
RθJA
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
105
120
130
145
40
Maximum
130
155
160
190
60
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 2016/08/26- Rev.1.0
No Preview Available ! |
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WPM3022
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = -250uA
VDS =-24V, VGS = 0V
VDS = 0 V, VGS = ±20V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = -250uA
VGS =-10V, ID = -3.1A
VGS = -4.5V, ID = -3.0A
VDS = -5 V, ID = -3A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0MHz, VDS =
-20 V
VGS = -10 V, VDS = -15 V,
ID =-3.1 A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VGS = -10 V, VDS =-15 V,
ID=-3A, RG=15Ω
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = -3.1A
Min
-30
-1.5
Typ Max Unit
-1
±100
V
uA
nA
-1.9 -2.5 V
56 68
mΩ
77 95
6 16 S
599
59 pF
41
9.7
1.3
nC
2.0
1.8
9.6
3.6
ns
36.8
7.2
-0.8 -1.5 V
Will Semiconductor Ltd. 3 2016/08/26- Rev.1.0
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