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PDF WPM3005 Data sheet ( Hoja de datos )
| Número de pieza | WPM3005 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPM3005 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPM3005
Single P-Channel, -30V, -4.1A, Power MOSFET
WPM3005
Http://www.sh-willsemi.com
VDS (V)
-30
Rds(on) (ȍ)
0.057@ VGS=̢10.0V
0.057@ VGS=̢10.0V
0.083@ VGS=̢4.5V
0.083@ VGS=̢4.5V
Descriptions
The WPM3005 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3005 is Pb-free and
Halogen-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-3L
SOT-23-3L
D
3
12
GS
Pin configuration (Top view)
3
W35*
12
W35= Device Code
* = Month (A~Z)
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Marking
Order information
Device
Package
Shipping
WPM3005-3/TR SOT-23-3L 3000/Reel&Tape
Will Semiconductor Ltd.
1
2015/08/25 – Rev. 1.3
1 page  
WPM3005
1000
800
600
400
200
0
0
V =0 f=1MHZ
GS
Crss
Cout
Cin
4 8 12 16
-V - Drain to Source Voltage (V)
DS
Capacitance
20
1.0
0.8
T=1500C
0.6
0.4
0.2
T=250C
0.4 0.5 0.6 0.7 0.8 0.9
-V - Source to Drain Voltage(V)
SD
Body diode forward voltage
50
40
30
20
10
0
10-3
10-2
10-1
1
Time (s)
10
Single pulse power
100 600
15
V =-15V,I =-5A
DS DS
12
100.0 TJ(Max)=150°C
TA=25°C
10.0
RDS(ON)
limited
1.0
0.1
0.1
1s
10s
DC
1 10
-VDS (Volts)
10Ps
100Ps
1ms
10ms
0.1s
100
Safe operating power
9
6
3
0
0
Will Semiconductor Ltd.
5 10 15
Q (nC)
g
Gate Charge Characteristics
5
20
2015/08/25 – Rev. 1.3
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM3005.PDF ] | |
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